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1.发明授权Integrated device of a capacitive type for detecting humidity, in particular manufactured using a CMOS technology 有权用于检测湿度的电容式集成装置，特别是使用CMOS技术制造的公开(公告)号：US09234859B2
公开(公告)日：2016-01-12
申请号：US14226554
申请日：2014-03-26
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno , Rosario Cariola , Benoit Gautheron
CPC classification number: G01N27/225 , H01L28/40
Abstract: An integrated capacitive-type humidity sensor formed in a semiconductor chip integrating a sensing capacitor and a reference capacitor. Each of the sensing and reference capacitors have at least a first electrode and at least a second electrode, the first and second electrodes of each of the sensing and reference capacitors being arranged at distance and mutually insulated. A hygroscopic layer extends on the sensing and reference capacitors and a conductive shielding region extends on the reference capacitor but not on the sensing capacitor.
Abstract translation: 集成电容型湿度传感器，形成在集成感测电容器和参考电容器的半导体芯片中。 感测和参考电容器中的每一个具有至少第一电极和至少第二电极，每个感测和参考电容器的第一和第二电极被布置成距离并相互绝缘。 吸湿层在感测和参考电容器上延伸，导电屏蔽区域在参考电容器上延伸，但不在感测电容器上。
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2.发明申请INTEGRATED DEVICE OF A CAPACITIVE TYPE FOR DETECTING HUMIDITY, IN PARTICULAR MANUFACTURED USING A CMOS TECHNOLOGY 有权用于检测湿度的电容式集成装置，特别是采用CMOS技术制造公开(公告)号：US20140291778A1
公开(公告)日：2014-10-02
申请号：US14226554
申请日：2014-03-26
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno , Rosario Cariola , Benoit Gautheron
CPC classification number: G01N27/225 , H01L28/40
Abstract: An integrated capacitive-type humidity sensor formed in a semiconductor chip integrating a sensing capacitor and a reference capacitor. Each of the sensing and reference capacitors have at least a first electrode and at least a second electrode, the first and second electrodes of each of the sensing and reference capacitors being arranged at distance and mutually insulated. A hygroscopic layer extends on the sensing and reference capacitors and a conductive shielding region extends on the reference capacitor but not on the sensing capacitor.
Abstract translation: 集成电容型湿度传感器，形成在集成感测电容器和参考电容器的半导体芯片中。 感测和参考电容器中的每一个具有至少第一电极和至少第二电极，每个感测和参考电容器的第一和第二电极被布置成距离并相互绝缘。 吸湿层在感测和参考电容器上延伸，导电屏蔽区域在参考电容器上延伸，但不在感测电容器上。
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公开(公告)号：US10739212B2
公开(公告)日：2020-08-11
申请号：US16394804
申请日：2019-04-25
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.
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公开(公告)号：US11709185B2
公开(公告)日：2023-07-25
申请号：US17670858
申请日：2022-02-14
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Calogero Marco Ippolito , Angelo Recchia , Antonio Cicero , Pierpaolo Lombardo
CPC classification number: G01R19/0038 , G01R19/0069 , G05F3/08 , H03B5/04 , H03F1/0205 , H03F3/4565
Abstract: An amplification interface includes first and second differential input terminals, first and second differential output terminals providing first and second output voltages defining a differential output signal, and first and second analog integrators coupled between the first and second differential input terminals and the first and second differential output terminals, the first and second analog integrators being resettable by a reset signal. A control circuit generates the reset signal such that the first and second analog integrators are periodically reset during a reset interval and activated during a measurement interval, receives a control signal indicative of offsets in the measurement sensor current and the reference sensor current, and generates a drive signal as a function of the control signal. First and second current generators coupled first and second compensation circuits to the first and second differential input terminals as a function of a drive signal.
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公开(公告)号：US20200333197A1
公开(公告)日：2020-10-22
申请号：US16921819
申请日：2020-07-06
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.
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Patent Agency Ranking
公开(公告)号：US10809862B2
公开(公告)日：2020-10-20
申请号：US16523302
申请日：2019-07-26
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Angelo Recchia , Antonio Cicero , Pierpaolo Lombardo , Michele Vaiana
Abstract: A touchscreen resistive sensor includes a network of resistive sensor branches coupled to a number of sensor nodes arranged at touch locations of the touchscreen. A test sequence is performed by sequentially applying to each sensor node a reference voltage level, jointly coupling to a common line the other nodes, sensing a voltage value at the common line, and declaring a short circuit condition as a result of the voltage value sensed at the common line reaching a short circuit threshold. A current value level flowing at the sensor node to which the reference voltage level is applied is sensed and a malfunction of the resistive sensor branch coupled with the sensor node to which a reference voltage level is applied is generated as a result of the current value sensed at the sensor node reaching an upper threshold or lower threshold.
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公开(公告)号：US09540229B2
公开(公告)日：2017-01-10
申请号：US14962945
申请日：2015-12-08
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giuseppe Bruno , Sebastiano Conti , Mario Chiricosta , Michele Vaiana , Calogero Marco Ippolito , Mario Maiore , Daniele Casella
IPC: B81B7/00
CPC classification number: B81B7/007 , B81B7/02 , B81B2201/0264 , B81B2201/0292 , B81B2207/094 , G01L19/0092 , G01N27/223 , H01L23/3121 , H01L2224/32145 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: A packaged sensor assembly includes: a packaging structure, having at least one opening; a humidity sensor and a pressure sensor, which are housed inside the packaging structure and communicate fluidically with the outside through the opening, and a control circuit, operatively coupled to the humidity sensor and to the pressure sensor; wherein the humidity sensor and the control circuit are integrated in a first chip, and the pressure sensor is integrated in a second chip distinct from the first chip and bonded to the first chip.
Abstract translation: 包装传感器组件包括：具有至少一个开口的包装结构; 湿度传感器和压力传感器，其容纳在包装结构内并通过开口与外部流体连通;以及控制电路，可操作地耦合到湿度传感器和压力传感器; 其中所述湿度传感器和所述控制电路集成在第一芯片中，并且所述压力传感器集成在与所述第一芯片不同的第二芯片中并且被结合到所述第一芯片。
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8.发明授权公开(公告)号：US12066324B2
公开(公告)日：2024-08-20
申请号：US17530785
申请日：2021-11-19
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Michele Vaiana , Enri Duqi , Maria Eloisa Castagna
CPC classification number: G01J1/36 , H01L33/465 , G01J2001/363
Abstract: Radiation sensor including a detection assembly and a chopper assembly, which are mechanically coupled to delimit a main cavity; and wherein the chopper assembly includes: a suspended movable structure, which extends in the main cavity; and an actuation structure, which is electrically controllable to cause a change of position of the suspended movable structure. The detection unit includes a detection structure, which faces the main cavity and includes a number of detection devices. The suspended movable structure includes a first shield of conductive material, which shields the detection devices from the radiation, the shielding of the detection devices being a function of the position of the suspended movable structure.
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公开(公告)号：US11817838B2
公开(公告)日：2023-11-14
申请号：US17687079
申请日：2022-03-04
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Michele Vaiana
IPC: H03F3/45
CPC classification number: H03F3/45753 , H03F2200/228 , H03F2200/331 , H03F2200/447 , H03F2200/471 , H03F2203/45441 , H03F2203/45514
Abstract: An electronic amplification-interface circuit includes a differential-current reading circuit having a first input terminal and a second input terminal. The differential-current reading circuit includes a continuous-time sigma-delta conversion circuit formed by an integrator-and-adder module generating an output signal that is coupled to an input of a multilevel-quantizer circuit configured to output a multilevel quantized signal. The integrator-and-adder module includes a differential current-integrator circuit configured to output a voltage proportional to an integral of a difference between currents received at the first and second input terminals. A digital-to-analog converter, driven by a respective reference current, receives and converts the multilevel quantized signal into a differential analog feedback signal. The integrator-and-adder module adds the differential analog feedback signal to the differential signal formed at the first and second input terminals.
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公开(公告)号：US11561663B2
公开(公告)日：2023-01-24
申请号：US17038546
申请日：2020-09-30
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Angelo Recchia , Antonio Cicero , Pierpaolo Lombardo , Michele Vaiana
Abstract: A touchscreen resistive sensor includes a network of resistive sensor branches coupled to a number of sensor nodes arranged at touch locations of the touchscreen. A test sequence is performed by sequentially applying to each sensor node a reference voltage level, jointly coupling to a common line the other nodes, sensing a voltage value at the common line, and declaring a short circuit condition as a result of the voltage value sensed at the common line reaching a short circuit threshold. A current value level flowing at the sensor node to which the reference voltage level is applied is sensed and a malfunction of the resistive sensor branch coupled with the sensor node to which a reference voltage level is applied is generated as a result of the current value sensed at the sensor node reaching an upper threshold or lower threshold.
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