公开(公告)号：US20150249179A1

公开(公告)日：2015-09-03

申请号：US14627038

申请日：2015-02-20

Applicant: STMicroelectronics SA

Inventor： Bruno Rauber

IPC: H01L31/112 ,  H01L31/02 ,  H01L31/028

CPC classification number: H01L27/1446 ,  H01L31/101 ,  H01L31/11

Abstract: A photodetector is formed in a silicon-on-insulator (SOI) type semiconductor layer. The photodetector includes a first region and a second region of a first conductivity type separated from each other by a central region of a second conductivity type so as to define a phototransistor. A transverse surface of the semiconductor layer is configured to receive an illumination. The transverse surface extends orthogonally to an upper surface of the central region.

Abstract translation: 在绝缘体上硅（SOI）型半导体层中形成光检测器。 光电检测器包括第一导电类型的第一区域和第二区域，第二区域通过第二导电类型的中心区域彼此分开，以便限定光电晶体管。 半导体层的横向表面被配置为接收照明。 横向表面垂直于中心区域的上表面延伸。

公开(公告)号：US09997550B2

公开(公告)日：2018-06-12

申请号：US14627038

申请日：2015-02-20

Applicant: STMicroelectronics SA

Inventor： Bruno Rauber

IPC: H01L27/14 ,  H01L31/101 ,  H01L31/11 ,  H01L27/144

CPC classification number: H01L27/1446 ,  H01L31/101 ,  H01L31/11

Abstract: A photodetector is formed in a silicon-on-insulator (SOI) type semiconductor layer. The photodetector includes a first region and a second region of a first conductivity type separated from each other by a central region of a second conductivity type so as to define a phototransistor. A transverse surface of the semiconductor layer is configured to receive an illumination. The transverse surface extends orthogonally to an upper surface of the central region.

公开(公告)号：US20130105893A1

公开(公告)日：2013-05-02

申请号：US13660681

申请日：2012-10-25

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： David Petit ,  Bruno Rauber

IPC: H01L27/088 ,  H01L21/336

CPC classification number: H01L29/7824 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/1095 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66689

Abstract: A DMOS on SOI transistor including an elongated gate extending across the entire width of an active area; a drain region of a first conductivity type extending across the entire width of the active area; a source region of the first conductivity type extending parallel to the gate and stopping before the limit of the active area at least on one side of the transistor width, an interval existing between the limit of the source region and the limit of the active area; a bulk region of a second conductivity type extending under the gate and in said interval; a more heavily-doped region of the second conductivity type extending on a portion of said interval on the side of the limit of the active area; and an elongated source metallization extending across the entire width of the active area.

Abstract translation: SOI晶体管上的DMOS，包括延伸跨有效区域的整个宽度的细长栅极; 在有源区的整个宽度上延伸的第一导电类型的漏区; 所述第一导电类型的源极区域平行于所述栅极延伸并且在所述有源区域的极限之前至少在所述晶体管宽度的一侧上停止，所述间隔存在于所述源极区域的极限与所述有源区域的极限之间; 在栅极和所述间隔内延伸的第二导电类型的主体区域; 所述第二导电类型的更高掺杂区域在所述间隔的所述有效面积极限侧的一部分上延伸; 以及延伸穿过有效区域的整个宽度的细长源金属化。