公开(公告)号：US08916393B2

公开(公告)日：2014-12-23

申请号：US13624214

申请日：2012-09-21

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Rachid Taibi ,  Cedrick Chappaz ,  Lea Di Cioccio ,  Laurent-Luc Chapelon

IPC: H01L21/66 ,  H01L27/06

CPC classification number: H01L25/0657 ,  H01L22/12 ,  H01L22/14 ,  H01L27/0688 ,  H01L2224/48463 ,  H01L2225/0651 ,  H01L2225/06541 ,  H01L2225/06596

Abstract: A three-dimensional integrated structure may include two assembled integrated circuits respectively including two metallic lines, and at least two cavities passing through one of the integrated circuits and opening onto two locations respectively in electrical contact with the two metallic lines. The cavities may be sized to place a measuring apparatus at the bottom of the cavities, and in electrical contact with the two locations.

Abstract translation: 三维集成结构可以包括分别包括两条金属线的两个组装的集成电路，以及穿过集成电路中的一个的至少两个空腔，并分别与两个金属线电接触地分开开放到两个位置。 空腔的尺寸可以将测量装置放置在空腔的底部，并与两个位置电接触。

公开(公告)号：US20130181220A1

公开(公告)日：2013-07-18

申请号：US13624214

申请日：2012-09-21

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Rachid Taibi ,  Cedrick Chappaz ,  Lea Di Cioccio ,  Laurent-Luc Chapelon

IPC: H01L21/66

CPC classification number: H01L25/0657 ,  H01L22/12 ,  H01L22/14 ,  H01L27/0688 ,  H01L2224/48463 ,  H01L2225/0651 ,  H01L2225/06541 ,  H01L2225/06596

Abstract: A three-dimensional integrated structure may include two assembled integrated circuits respectively including two metallic lines, and at least two cavities passing through one of the integrated circuits and opening onto two locations respectively in electrical contact with the two metallic lines. The cavities may be sized to place a measuring apparatus at the bottom of the cavities, and in electrical contact with the two locations.