公开(公告)号：US20140361440A1

公开(公告)日：2014-12-11

申请号：US14287343

申请日：2014-05-27

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： PIERRE BAR ,  Simon GOUSSEAU ,  Yann BEILLIARD

IPC: H01L23/373 ,  H01L23/48 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/3677 ,  H01L23/4275 ,  H01L24/16 ,  H01L24/73 ,  H01L2224/16235 ,  H01L2224/73204

Abstract: A method for producing at least one through-silicon via inside a substrate may include forming a cavity in the substrate from a first side of the substrate until an electrically conductive portion is emerged onto. The method may also include forming an electrically conductive layer at a bottom and on walls of the cavity, and at least partly on a first side outside the cavity. The process may further include at least partially filling the cavity with at least one phase-change material. Another aspect is directed to a three-dimensional integrated structure.

Abstract translation: 用于在衬底内部生产至少一个穿硅的方法可包括在衬底的第一侧从衬底的第一侧形成空腔，直到导电部分出现。 该方法还可以包括在空腔的底部和壁上形成导电层，并且至少部分地在空腔外部的第一侧上形成导电层。 该方法还可以包括用至少一种相变材料至少部分地填充空腔。 另一方面涉及三维综合结构。