公开(公告)号：US20230371266A1

公开(公告)日：2023-11-16

申请号：US18156959

申请日：2023-01-19

申请人： SUNRISE MEMORY CORPORATION

发明人： Minori Kajimoto ,  Takashi Hirotani ,  Masahiro Yoshihara

IPC分类号： H10B51/20 ,  H10B51/10 ,  H10B51/30 ,  H01L23/528 ,  H01L29/786 ,  H01L29/66 ,  H01L29/78

CPC分类号： H10B51/20 ,  H01L23/5283 ,  H01L29/66742 ,  H01L29/6684 ,  H01L29/78391 ,  H01L29/7869 ,  H10B51/10 ,  H10B51/30

摘要： A memory device includes a stacked body of alternately arranged conductor-including layers and insulating films in the first direction and pillar bodies within the stacked body. Each pillar body includes first and second conductive pillars and an insulator pillar located between the first conductive pillar and the second conductive pillar. Each conductor-including layer includes a semiconductor member, an electrode film and a ferroelectric layer provided between the semiconductor member and the electrode film. The semiconductor members in the multiple conductor-including layers are separated from each other in the first direction.