公开(公告)号：US20240186442A1

公开(公告)日：2024-06-06

申请号：US18026350

申请日：2022-10-12

Applicant: SUZHOU YIXIAN ELECTRONIC TECHNOLOGY CO., LTD.

Inventor： Wei LEI ,  Jianming ZHOU ,  Ying ZHU

IPC: H01L31/115 ,  G01T7/00 ,  H01L31/02 ,  H01L31/032

CPC classification number: H01L31/115 ,  G01T7/005 ,  H01L31/02019 ,  H01L31/032

Abstract: A γ ray detector structure based on a p-i-n junction of perovskite and a calibration method are provided. An ultrathick intrinsic perovskite crystal grows by utilizing temperature inversion solution crystallization as a γ ray photon absorber, a p-type perovskite epitaxial layer grows on one side of the intrinsic perovskite crystal by adopting an epitaxial doping growing method, a n-type perovskite epitaxial layer grows on the other side, a dark state current and noise are inhibited by utilizing the p-i-n junction of perovskite, and a large-sized perovskite crystal is used to absorb and convert more γ photons. Detected signals at a cathode terminal and an anode terminal are measured simultaneously. The longitudinal interaction depths of the γ photons are calibrated according to the ratio of the two signals, and then detection events at the same depth are classified and counted respectively.