公开(公告)号：US20230215988A1

公开(公告)日：2023-07-06

申请号：US18080464

申请日：2022-12-13

Applicant: Samsung Display Co., LTD.

Inventor： Tae Hun KIM ,  Geun Woo KO ,  Ha Nul YOO ,  Gyeong Seon PARK ,  Tae Sung JANG

IPC: H01L33/44 ,  H01L33/38 ,  H01L33/20

CPC classification number: H01L33/44 ,  H01L33/38 ,  H01L33/20 ,  H01L25/167

Abstract: A semiconductor light emitting device includes a first conductivity type semiconductor, an active layer on the first conductivity type semiconductor, a second conductivity type semiconductor on the active layer, an electrode layer on the second conductivity type semiconductor, and a passivation layer covering at least side surfaces of the first conductivity type semiconductor, the active layer, the second conductivity type semiconductor, and the electrode layer. The angle between the lower surface and the side surface of the electrode layer is about 45° or more and about 90° or less. The passivation layer includes a first portion disposed on a side surface of the first conductivity type semiconductor and having a first thickness, and a second portion on a side surface of the electrode layer and having a second thickness different from the first thickness.