公开(公告)号：US20230276660A1

公开(公告)日：2023-08-31

申请号：US18140530

申请日：2023-04-27

Applicant: Samsung Display Co., Ltd.

Inventor： Jae Bum HAN ,  Moon Sung Kim ,  Young Gil Park ,  Soo Im Jeong

IPC: H10K59/121 ,  H10K59/40

CPC classification number: H10K59/1213 ,  H10K59/40 ,  G09G2300/0426 ,  G09G3/3233

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

公开(公告)号：US20220028947A1

公开(公告)日：2022-01-27

申请号：US17373602

申请日：2021-07-12

Applicant: Samsung Display Co., Ltd.

Inventor： Jae Bum HAN ,  Moon Sung KIM ,  Young Gil PARK ,  Soo Im JEONG

IPC: H01L27/32

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

公开(公告)号：US20240136443A1

公开(公告)日：2024-04-25

申请号：US18492927

申请日：2023-10-23

Applicant: Samsung Display Co., LTD.

Inventor： Sun Woo LEE ,  Jae Bum HAN ,  Bo Hwa KIM ,  Min Ji KIM

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor may include a first insulating layer disposed on a substrate, a dummy layer disposed on the first insulating layer, a semiconductor layer disposed on the dummy layer, the semiconductor layer including a first area, a second area, and a channel area disposed between the first and second areas, a second insulating layer disposed on the semiconductor layer, a gate electrode overlapping the channel area with the second insulating interposed therebetween, a third insulating layer disposed over the gate electrode, a first electrode disposed on the third insulating layer, the first electrode being electrically connected to the first area, and a second electrode disposed on the third insulating layer spaced apart from the first electrode, the second electrode being electrically connected to the second area. The dummy layer may include indium oxide, and the semiconductor layer may include indium gallium zinc oxide.

公开(公告)号：US20250024708A1

公开(公告)日：2025-01-16

申请号：US18904654

申请日：2024-10-02

Applicant: Samsung Display Co., Ltd.

Inventor： Jae Bum HAN ,  Moon Sung KIM ,  Young Gil PARK ,  Soo lm JEONG

IPC: H10K59/121 ,  G09G3/3233 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H10K59/12 ,  H10K59/40

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

公开(公告)号：US20240234580A9

公开(公告)日：2024-07-11

申请号：US18492927

申请日：2023-10-24

Applicant: Samsung Display Co., LTD.

Inventor： Sun Woo LEE ,  Jae Bum HAN ,  Bo Hwa KIM ,  Min Ji KIM

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor may include a first insulating layer disposed on a substrate, a dummy layer disposed on the first insulating layer, a semiconductor layer disposed on the dummy layer, the semiconductor layer including a first area, a second area, and a channel area disposed between the first and second areas, a second insulating layer disposed on the semiconductor layer, a gate electrode overlapping the channel area with the second insulating interposed therebetween, a third insulating layer disposed over the gate electrode, a first electrode disposed on the third insulating layer, the first electrode being electrically connected to the first area, and a second electrode disposed on the third insulating layer spaced apart from the first electrode, the second electrode being electrically connected to the second area. The dummy layer may include indium oxide, and the semiconductor layer may include indium gallium zinc oxide.