DISPLAY DEVICE
    1.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20240049577A1

    公开(公告)日:2024-02-08

    申请号:US18196971

    申请日:2023-05-12

    CPC classification number: H10K59/879 H10K59/122 H10K59/38

    Abstract: A display device includes a substrate, a low refractive index layer disposed on the substrate, a first capping layer disposed on the low refractive index layer and directly contacting an upper surface of the low refractive index layer, a second capping layer disposed on the first capping layer, and a wavelength conversion layer disposed on the second capping layer and having a refractive index higher than a refractive index of the low refractive index layer, wherein a nitrogen atomic ratio of the first capping layer is different from a nitrogen atomic ratio of the second capping layer.

    DISPLAY DEVICE
    4.
    发明申请

    公开(公告)号:US20220246891A1

    公开(公告)日:2022-08-04

    申请号:US17649119

    申请日:2022-01-27

    Abstract: A display device includes a first substrate having, defined thereon, an active region and a nonactive region around the active region; an active element layer on a first surface of the first substrate and in the active region; a second substrate facing the first surface of the first substrate, the second substrate being on the active element layer; and an antireflection member on a first surface of the second substrate that faces the first substrate, the antireflection member being spaced apart from the active element layer, wherein the antireflection member includes first, second, third, and fourth refractive layers sequentially stacked from the first surface of the second substrate, refractive indexes of the first and third refractive layers are greater than refractive indexes of the second and fourth refractive layers, and the fourth refractive layer includes aluminum, indium, and/or gallium.

    DISPLAY DEVICE
    6.
    发明申请

    公开(公告)号:US20220028947A1

    公开(公告)日:2022-01-27

    申请号:US17373602

    申请日:2021-07-12

    Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

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