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公开(公告)号：US20230276660A1
公开(公告)日：2023-08-31
申请号：US18140530
申请日：2023-04-27
发明人： Jae Bum HAN , Moon Sung Kim , Young Gil Park , Soo Im Jeong
IPC分类号： H10K59/121 , H10K59/40
CPC分类号： H10K59/1213 , H10K59/40 , G09G2300/0426 , G09G3/3233
摘要： A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.
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公开(公告)号：US11967669B2
公开(公告)日：2024-04-23
申请号：US17843052
申请日：2022-06-17
发明人： Jae-Bum Han , Young Gil Park , Jung Hwa Park , Na Ri Ahn , Soo Im Jeong , Ki Nam Kim , Moon Sung Kim
CPC分类号： H01L33/58 , H01L27/1225 , H01L27/1237 , H01L29/24 , H01L33/40
摘要： A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.
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公开(公告)号：US11672146B2
公开(公告)日：2023-06-06
申请号：US17373602
申请日：2021-07-12
发明人： Jae Bum Han , Moon Sung Kim , Young Gil Park , Soo Im Jeong
IPC分类号： H01L29/08 , H01L27/32 , G09G3/3233 , H01L29/66 , H01L27/12 , H01L29/786
CPC分类号： H01L27/3262 , H01L27/323 , G09G3/3233 , G09G2300/0426 , H01L27/1222 , H01L27/1274 , H01L29/66757 , H01L29/78675 , H01L2227/323
摘要： A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.
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公开(公告)号：US20180040739A1
公开(公告)日：2018-02-08
申请号：US15662502
申请日：2017-07-28
发明人： SUNG WOOK WOO , Chang Ho Lee , Kyung Lae Rho , Doo Hyoung Lee , Sung Chan Jo , Sang Woo Sohn , Sang Won Shin , Soo Im Jeong , Chang Yong Jeong
IPC分类号： H01L29/786 , H01L29/24 , H01L29/10 , H01L29/04
CPC分类号： H01L29/78693 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.
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公开(公告)号：US20220320391A1
公开(公告)日：2022-10-06
申请号：US17843052
申请日：2022-06-17
发明人： Jae-Bum HAN , Young Gil Park , Jung Hwa Park , Na Ri Ahn , Soo Im Jeong , Ki Nam Kim , Moon Sung Kim
摘要： A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.
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公开(公告)号：US10975274B2
公开(公告)日：2021-04-13
申请号：US15654943
申请日：2017-07-20
发明人： Sung Kim , Hyun Sook Kim , Jang Hwan Jeong , Sung Chan Jo , Kyung Lae Rho , Soo Im Jeong , Oh Jung Kwon , Sung Hwan Kim , Oh Nam Kwon , Jae Gwan Lee , Jung Hun Kim
摘要： Disclosed is an acrylic adhesive, including an acrylic polymer obtained by polymerizing a mixture of about 120 parts by weight to about 250 parts by weight of acrylic monomers with about 0.1 parts by weight to about 1 parts by weight of an azo initiator, about 0.5 parts by weight to about 1 parts by weight of a filler, about 1.5 parts by weight to about 2.5 parts by weight of a crosslinking agent, and about 0.5 parts by weight to 1 parts by weight of an anti-static agent.
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公开(公告)号：US10546959B2
公开(公告)日：2020-01-28
申请号：US15662502
申请日：2017-07-28
发明人： Sung Wook Woo , Chang Ho Lee , Kyung Lae Rho , Doo Hyoung Lee , Sung Chan Jo , Sang Woo Sohn , Sang Won Shin , Soo Im Jeong , Chang Yong Jeong
IPC分类号： H01L29/786 , H01L29/04 , H01L29/24 , H01L29/10
摘要： A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.
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公开(公告)号：US12127435B2
公开(公告)日：2024-10-22
申请号：US18140530
申请日：2023-04-27
发明人： Jae Bum Han , Moon Sung Kim , Young Gil Park , Soo Im Jeong
IPC分类号： H01L29/08 , H10K59/121 , H10K59/40 , G09G3/3233 , H01L27/12 , H01L29/66 , H01L29/786 , H10K59/12
CPC分类号： H10K59/1213 , H10K59/40 , G09G3/3233 , G09G2300/0426 , H01L27/1222 , H01L27/1274 , H01L29/66757 , H01L29/78675 , H10K59/1201
摘要： A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.
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公开(公告)号：US11367815B2
公开(公告)日：2022-06-21
申请号：US16941102
申请日：2020-07-28
发明人： Jae-Bum Han , Young Gil Park , Jung Hwa Park , Na Ri Ahn , Soo Im Jeong , Ki Nam Kim , Moon Sung Kim
摘要： A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.
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公开(公告)号：US20210066555A1
公开(公告)日：2021-03-04
申请号：US16941102
申请日：2020-07-28
发明人： Jae-Bum HAN , Young Gil PARK , Jung Hwa PARK , Na Ri AHN , Soo Im Jeong , Ki Nam KIM , Moon Sung KIM
摘要： A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. Hie first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.
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