公开(公告)号：US20140225195A1

公开(公告)日：2014-08-14

申请号：US13914821

申请日：2013-06-11

Applicant: Samsung Display Co., LTD.

Inventor： Gun-Hee KIM ,  Sei-Yong PARK ,  Woo-Ho JEONG ,  Jin-Hyun PARK ,  Jee-Hun LIM

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/786 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the gate electrode, an oxide semiconductor pattern disposed on the gate insulation layer, where the oxide semiconductor pattern includes a first area whose carrier concentration is in a range of about 1017 per cubic centimeter to about 1019 per cubic centimeter and a second area whose carrier concentration is less than the carrier concentration of the first area, an etch stopper disposed on the oxide semiconductor pattern, where the etch stopper covers the first area and the second area of the oxide semiconductor pattern, a signal electrode partially overlapping the etch stopper and the second area, and a passivation layer which covers the etch stopper and the signal electrode.

Abstract translation: 薄膜晶体管基板包括基板，设置在基板上的栅极电极，设置在栅电极上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体图案，其中氧化物半导体图案包括第一区域，其载流子浓度 在约1017每立方厘米至约1019每立方厘米的范围内，第二区域的载流子浓度小于第一区域的载流子浓度，蚀刻停止器设置在氧化物半导体图案上，其中蚀刻停止器覆盖 氧化物半导体图案的第一区域和第二区域，与蚀刻停止器和第二区域部分重叠的信号电极，以及覆盖蚀刻停止器和信号电极的钝化层。