公开(公告)号：US20240188326A1

公开(公告)日：2024-06-06

申请号：US18464048

申请日：2023-09-08

Applicant: Samsung Display Co., Ltd.

Inventor： Sungbae Ju ,  Sora Kim ,  Jeongseon Kim ,  Ahyeon Lee

IPC: H10K59/12 ,  H10K59/122 ,  H10K59/35 ,  H10K59/80

CPC classification number: H10K59/1201 ,  H10K59/122 ,  H10K59/35 ,  H10K59/87 ,  H10K2102/302

Abstract: A display device includes: a display panel; a protection layer on the display panel and comprising a plurality of grooves each having an anchor shape, wherein the plurality of grooves comprise at least a first groove; a 1-1 layer arranged along at least a portion of an inner side surface of the first groove; and a plurality of transparent partition walls on the protection layer and comprising a first transparent partition wall, wherein the first transparent partition wall is arranged along the first groove and has a portion filling the first groove.

公开(公告)号：US11690251B2

公开(公告)日：2023-06-27

申请号：US17111897

申请日：2020-12-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sangjin Park ,  Youngdae Kim ,  Jeongseon Kim ,  Sangjin Lee ,  Ahyeon Lee

IPC: H01L29/08 ,  H10K59/121 ,  G09G3/3233 ,  H10K71/00 ,  H01L27/12 ,  H10K59/12

CPC classification number: H10K59/1213 ,  G09G3/3233 ,  H10K71/00 ,  G09G2300/0819 ,  G09G2320/0257 ,  H01L27/1237 ,  H10K59/1201

Abstract: An organic light-emitting display device includes a driving transistor configured to control current to an organic light-emitting diode from a power voltage line, a compensation transistor configured to diode-connect the driving transistor in response to a voltage applied to a compensation gate electrode of the driving transistor, and a gate insulating layer interposed between a driving active region of the driving transistor and the driving gate electrode, and between a compensation active region of the compensation transistor and the compensation gate electrode. A dielectric constant in a first portion of the gate insulating layer between the driving active region and the driving gate electrode is greater than a dielectric constant in a second portion of the gate insulating layer between the compensation active region and the compensation gate electrode.