公开(公告)号：US20240402853A1

公开(公告)日：2024-12-05

申请号：US18617457

申请日：2024-03-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JUNSU PARK ,  Bohwa Kim ,  Dong-Hyun Gong ,  Moonsung Kim

IPC: G06F3/044 ,  H10K59/131 ,  H10K59/40 ,  H10K59/80

Abstract: An electronic device includes a base layer, a circuit layer disposed on the base layer and including a transistor, a plurality of inorganic films, and a plurality of organic films. A display element layer is disposed on the circuit layer. An encapsulation layer is disposed on the display element layer. An input sensor is disposed on the encapsulation layer and includes a sensor base layer, a sensor conductive layer disposed on the sensor base layer, and a sensor insulating layer disposed on the sensor base layer and including silicon nitride (SiNx). The sensor base layer includes a buffer insulating layer including silicon (Si) and oxygen (O), and an atomic percent of oxygen (O) in the buffer insulating layer is in a range of 2 at % to 67 at %.

公开(公告)号：US11569269B2

公开(公告)日：2023-01-31

申请号：US17144696

申请日：2021-01-08

Applicant: Samsung Display Co., Ltd.

Inventor： Jaebum Han ,  Bohwa Kim ,  Younggil Park ,  Junghwa Park ,  Nari Ahn ,  Sooim Jeong

IPC: H01L27/12 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

Abstract: A display apparatus is provided which may include a substrate including a display area and a non-display area adjacent to the display area, a first thin-film transistor disposed on the substrate and including a first semiconductor layer including an oxide semiconductor material, and a second thin-film transistor disposed on the substrate and including a second semiconductor layer including a silicon semiconductor material, wherein a surface roughness of the first semiconductor layer is increased by plasma treatment. A method of manufacturing the display apparatus is also provided.