Display apparatus
    1.
    发明授权

    公开(公告)号:US11315998B2

    公开(公告)日:2022-04-26

    申请号:US16883399

    申请日:2020-05-26

    Abstract: A display apparatus that includes a substrate, a first thin-film transistor and a second, thin-film transistor disposed on the substrate at different distances from a top surface of the substrate. A display device is electrically connected to the first thin-film transistor. The first thin-film transistor includes a first semiconductor layer in polycrystalline silicon and a first gate electrode that overlaps a channel region of the first semiconductor layer in a direction of a thickness of the substrate. The second thin-film transistor includes a second semiconductor layer including an oxide semiconductor. The first gate electrode has a stacked structure including a first layer and a second layer. The second layer includes titanium and the first layer includes a different material from the second layer.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240414978A1

    公开(公告)日:2024-12-12

    申请号:US18417894

    申请日:2024-01-19

    Abstract: A display device includes a substrate, a pixel circuit layer above the substrate, and including at least one thin film transistor, and a pixel electrode above the pixel circuit layer, and electrically connected to the thin film transistor, wherein the pixel electrode includes a reflective layer, a conductive layer above the reflective layer, and an oxide layer above the conductive layer, and wherein a ratio of a thickness of the conductive layer and a thickness of the oxide layer is about 1.51 to about 2.331.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE

    公开(公告)号:US20210066424A1

    公开(公告)日:2021-03-04

    申请号:US16837652

    申请日:2020-04-01

    Abstract: A display device includes: a substrate; a first insulating layer disposed on the substrate and that includes an inorganic insulating material; an oxide semiconductor layer disposed on the first insulating layer; a second insulating layer disposed on the oxide semiconductor layer and that includes an inorganic insulating material; and a third insulating layer disposed on a gate electrode disposed on the second insulating layer and that includes an inorganic insulating material. The oxide semiconductor layer includes a first conductive region, a second conductive region, and a channel region located between the first conductive region and the second conductive region, and a value in the channel region of the oxide semiconductor layer of HC according to equation (1) is less than 30%.

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