Plasma treatment apparatus and method of plasma treating a substrate using the same

    公开(公告)号:US10515784B2

    公开(公告)日:2019-12-24

    申请号:US15157344

    申请日:2016-05-17

    Abstract: Exemplary embodiments of the inventive concept provide a plasma treatment apparatus with a substrate support unit, a plasma unit, a first rotation driving unit, and a gas supply part. The substrate support unit supports a substrate. The plasma unit generates a plasma and provides the plasma to the substrate. The first rotation driving unit is coupled to the plasma unit to rotate the plasma unit with respect to the substrate support unit. The gas supply part supplies a source gas to the plasma unit. The plasma unit includes a body, a first electrode located in the body, a second electrode located in the body and facing the first electrode, and a pipe located between the first and second electrodes to flow the source gas therethrough.

    PLASMA TREATMENT APPARATUS AND METHOD OF PLASMA TREATING A SUBSTRATE USING THE SAME
    6.
    发明申请
    PLASMA TREATMENT APPARATUS AND METHOD OF PLASMA TREATING A SUBSTRATE USING THE SAME 审中-公开
    等离子体处理装置和使用其处理基板的等离子体处理方法

    公开(公告)号:US20170032932A1

    公开(公告)日:2017-02-02

    申请号:US15157344

    申请日:2016-05-17

    Abstract: Exemplary embodiments of the inventive concept provide a plasma treatment apparatus with a substrate support unit, a plasma unit, a first rotation driving unit, and a gas supply part. The substrate support unit supports a substrate. The plasma unit generates a plasma and provides the plasma to the substrate. The first rotation driving unit is coupled to the plasma unit to rotate the plasma unit with respect to the substrate support unit. The gas supply part supplies a source gas to the plasma unit. The plasma unit includes a body, a first electrode located in the body, a second electrode located in the body and facing the first electrode, and a pipe located between the first and second electrodes to flow the source gas therethrough.

    Abstract translation: 本发明构思的示例性实施例提供了具有衬底支撑单元,等离子体单元,第一旋转驱动单元和气体供应部件的等离子体处理设备。 基板支撑单元支撑基板。 等离子体单元产生等离子体并将等离子体提供给基板。 第一旋转驱动单元联接到等离子体单元以相对于基板支撑单元旋转等离子体单元。 气体供应部件将源气体供应到等离子体单元。 等离子体单元包括主体,位于主体中的第一电极,位于主体中并面向第一电极的第二电极,以及位于第一和第二电极之间的管以使源气体流过其中的管。

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