Thin film transistor array panel
    1.
    发明授权

    公开(公告)号:US11217696B2

    公开(公告)日:2022-01-04

    申请号:US16354396

    申请日:2019-03-15

    Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.

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