公开(公告)号：US10586714B2

公开(公告)日：2020-03-10

申请号：US14752267

申请日：2015-06-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun-Min Cho ,  Dong-Il Kim

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/467 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1368 ,  H01L29/786

Abstract: A thin film transistor substrate includes a gate electrode arranged on a substrate, a gate insulation layer arranged on the gate electrode, an active pattern arranged on the gate insulation layer, a source electrode overlapping a first end portion of the active pattern, and a drain electrode overlapping a second and opposite end portion of the active pattern. A fluorocarbon-like material is arranged on one or more of surfaces of at least one of the active pattern, the source electrode and the drain electrode, and on a photoresist pattern used in the formation process of the thin film substrate. The fluorocarbon-like material on the photoresist pattern serves to maintain a shape and size of the photoresist pattern during subsequent patterning processes.