公开(公告)号：US20210249542A1

公开(公告)日：2021-08-12

申请号：US17086545

申请日：2020-11-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaeseob LEE ,  Meejae KANG ,  Yoonho KHANG ,  Keunwoo KIM ,  Hanbit KIM ,  Thanhtien NGUYEN

IPC: H01L29/786 ,  H01L27/32

Abstract: A display device including: a first thin film transistor (TFT) including a first semiconductor layer and a first gate electrode, the first semiconductor layer including a first channel region, a first source region, and a first drain region; a third TFT including a third semiconductor layer and a third gate electrode, the third semiconductor layer including a third channel region, a third source region, and a third drain region, wherein a leakage current of the third TFT in an off-state is less than a leakage current of the first TFT in the off-state; and a pixel electrode connected to one of the first source region and the first drain region, wherein the one of the first source region and the first drain region is connected to the third TFT.

公开(公告)号：US20220399420A1

公开(公告)日：2022-12-15

申请号：US17679691

申请日：2022-02-24

Applicant: Samsung Display Co., Ltd.

Inventor： Jaehwan CHU ,  Meejae KANG ,  Keunwoo KIM ,  Doona KIM ,  Sangsub KIM ,  Hanbit KIM ,  Dokyeong LEE ,  Yongsu LEE

IPC: H01L27/32

Abstract: A method of manufacturing a display apparatus includes forming a first photosensitive pattern and a second photosensitive pattern of different thicknesses on an active layer; forming a driving semiconductor layer and a compensation semiconductor layer using the first photosensitive pattern and the second photosensitive pattern as masks to etch the active layer; exposing an upper surface of the driving semiconductor layer by etching the first photosensitive pattern and forming a third photosensitive pattern by etching at least a portion of the second photosensitive pattern; forming a first insulating layer on the driving semiconductor layer and the third photosensitive pattern; exposing an upper surface of the compensation semiconductor layer by stripping the third photosensitive pattern; and forming a second insulating layer on the first insulating layer and the compensation semiconductor layer.