Abstract:
A method of fabricating a thin-film transistor (TFT) array substrate including forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming a semiconductor layer on the gate insulating layer, forming an ohmic contact layer on the semiconductor layer, and forming a source electrode and a drain electrode comprising a plurality of metal layer patterns on the ohmic contact layer, in which the semiconductor layer, the ohmic contact layer, the source electrode and the drain electrode are formed through a single mask process, and one of the plurality of metal layer patterns is etched through a polishing process to form the source electrode and the drain electrode.
Abstract:
A thin film transistor array panel includes: first to third gate lines extending in one direction and parallel to each other; a data line insulated from and intersecting the first to third gate lines; a first thin film transistor connected to the first gate line and the data line; a second thin film transistor connected to the second gate line and an output terminal of the first thin film transistor; a third thin film transistor connected to the third gate line and the data line; a fourth thin film transistor connected to the second gate line and an output terminal of the third thin film transistor; and first to fourth sub-pixel electrodes respectively connected to the first to fourth thin film transistors.