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公开(公告)号:US10361312B2
公开(公告)日:2019-07-23
申请号:US15480102
申请日:2017-04-05
Applicant: Samsung Display Co., Ltd.
Inventor: Seung Ho Jung , Chaun Gi Choi , Hye Young Park , Eun Young Lee , Joo Hee Jeon , Eun Jeong Cho , Bo Geon Jeon , Yung Bin Chung
Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
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公开(公告)号:US10672911B2
公开(公告)日:2020-06-02
申请号:US16451593
申请日:2019-06-25
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Seung Ho Jung , Chaun Gi Choi , Hye Young Park , Eun Young Lee , Joo Hee Jeon , Eun Jeong Cho , Bo Geon Jeon , Yung Bin Chung
Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
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公开(公告)号:US09647237B2
公开(公告)日:2017-05-09
申请号:US15045688
申请日:2016-02-17
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Seung Ho Jung , Chaun Gi Choi , Hye Young Park , Eun Young Lee , Joo Hee Jeon , Eun Jeong Cho , Bo Geon Jeon , Yung Bin Chung
CPC classification number: H01L29/78603 , H01L27/1218 , H01L27/1225 , H01L27/3244 , H01L27/3262 , H01L29/7849 , H01L29/78633 , H01L29/7869 , H01L51/0097 , H01L51/5256 , H01L2251/5338 , H01L2251/55 , Y02E10/549
Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
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公开(公告)号:US10229953B2
公开(公告)日:2019-03-12
申请号:US15013852
申请日:2016-02-02
Applicant: Samsung Display Co., Ltd.
Inventor: Seung Ho Jung , Chaun Gi Choi , Hye Young Park , Eun Young Lee , Joo Hee Jeon
Abstract: A substrate of a transparent flexible display and an organic light-emitting diode display including the same are disclosed. In one aspect, the substrate includes a first polymer film having a predetermined color and a second polymer film having an inverse opal structure formed on a surface of the first polymer film.
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公开(公告)号:US20190326442A1
公开(公告)日:2019-10-24
申请号:US16451593
申请日:2019-06-25
Applicant: SAMSUNG DISPLAY CO, LTD.
Inventor: Seung Ho JUNG , Chaun Gi Choi , Hye Young Park , Eun Young Lee , Joo Hee Jeon , Eun Jeong Cho , Bo Geon Jeon , Yung Bin Chung
IPC: H01L29/786 , H01L51/00 , H01L27/12 , H01L29/78 , H01L51/52
Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
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