公开(公告)号：US20150021592A1

公开(公告)日：2015-01-22

申请号：US14249525

申请日：2014-04-10

申请人： Samsung Display Co., Ltd.

发明人： Ki-Seong SEO ,  Sung-Hoon YANG ,  Tae-Young AHN ,  Sang-Wook LEE ,  Jung-Yun JO ,  Heon-Sik HA ,  Jin-Ho HWANG ,  Kyung-Tea PARK ,  Jun-Mo IM

IPC分类号： H01L27/12

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： A method of manufacturing a display substrate includes forming a gate electrode on a base substrate, forming an active pattern which includes an oxide semiconductor and overlaps with the gate electrode, forming an etch stopper which partially covers the active pattern, and performing a plasma treatment process to promote a reduction reaction to portions of the active pattern exposed by the etch stopper, thereby forming a source electrode and a drain electrode.

摘要翻译： 制造显示基板的方法包括在基底基板上形成栅电极，形成包括氧化物半导体并与栅电极重叠的有源图案，形成部分覆盖有源图案的蚀刻停止层，以及进行等离子体处理工艺 以促进对由蚀刻停止件暴露的有源图案的部分的还原反应，从而形成源电极和漏电极。

公开(公告)号：US20150014677A1

公开(公告)日：2015-01-15

申请号：US14081160

申请日：2013-11-15

申请人： Samsung Display Co., Ltd.

发明人： Jung-Yun JO ,  Sung-Hoon YANG ,  Ki-Seong SEO ,  Jin-Ho HWANG

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/66969 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： A thin film transistor substrate includes an active pattern which is disposed on a base substrate and includes a channel, a source electrode and a drain electrode, the channel which includes an oxide semiconductor, the source electrode and the drain electrode connected the channel, a gate electrode overlapped with the channel, a passivation layer which covers the source electrode, the drain electrode and the gate electrode and a fluorine deposition layer disposed between the active pattern and the passivation layer.

摘要翻译： 薄膜晶体管基板包括设置在基底基板上并包括沟道，源电极和漏电极的有源图案，所述沟道包括氧化物半导体，源极和与漏极连接的沟道，栅极 电极与沟道重叠，覆盖源电极，漏极和栅电极的钝化层和布置在活性图案和钝化层之间的氟沉积层。