公开(公告)号：US09864239B2

公开(公告)日：2018-01-09

申请号：US15011795

申请日：2016-02-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Miseon Seo ,  Keumdong Jung ,  Kihwan Kim ,  Jooyeon Lee ,  Munsoo Park

IPC: G02F1/1343 ,  G02F1/1368 ,  G02F1/1362

CPC classification number: G02F1/134309 ,  G02F1/13624 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134345

Abstract: A liquid crystal display (“LCD”) device capable of easily setting up an accurate resistance ratio between thin film transistors, the LCD device includes a first substrate including a gate line and a data line, a second substrate opposing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first sub-pixel electrode in a first sub-pixel region of the first substrate, a second sub-pixel electrode in a second sub-pixel region of the first substrate, a first transistor connected to the gate line, the data line, and the first sub-pixel electrode, a second transistor connected to the gate line, the first transistor, and the second sub-pixel electrode, and a third transistor connected to the gate line, the second sub-pixel electrode, and a storage line, wherein one of the first, second, and third transistors includes a plurality of divided channel regions.

公开(公告)号：US11296238B2

公开(公告)日：2022-04-05

申请号：US16984789

申请日：2020-08-04

Applicant: Samsung Display Co., Ltd.

Inventor： Hyunjung Lee ,  Youngkuk Kim ,  Miseon Seo

IPC: H01L29/786 ,  H01L27/32

Abstract: A thin-film transistor substrate and a display apparatus including the same includes a first thin-film transistor on a substrate. The first thin-film transistor includes a first semiconductor layer having a first channel area, a first source area, and a first drain area; a first lower gate electrode between the substrate and the first semiconductor layer; a first upper gate electrode on the first semiconductor layer and overlapping the first channel area; and a first electrode layer on the first upper gate electrode and electrically connected to at least one of the first source area and the first drain area. The first lower gate electrode overlaps the first channel area and the first drain area.