公开(公告)号：US20220173186A1

公开(公告)日：2022-06-02

申请号：US17382425

申请日：2021-07-22

Applicant: Samsung Display Co., Ltd.

Inventor： Jaebum Han ,  Younggil Park ,  Moonsung Kim ,  Jaisun Kyoung ,  Kihyun Kim ,  Sooim Jeong

IPC: H01L27/32

Abstract: Provided are a display apparatus with improved display quality and a method of manufacturing the same, the display apparatus including: a substrate including a first base layer, a second base layer arranged over the first base layer, and a first barrier layer disposed between the first base layer and the second base layer; a first thin-film transistor arranged over the substrate and including a first semiconductor layer and a first gate electrode, wherein the first barrier layer includes a first sub-layer and a second sub-layer disposed on the first sub-layer, the first sub-layer including an inorganic material and the second sub-layer including amorphous silicon and crystallized silicon.

公开(公告)号：US11315998B2

公开(公告)日：2022-04-26

申请号：US16883399

申请日：2020-05-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaebum Han ,  Younggil Park ,  Junghwa Park ,  Nari Ahn ,  Sooim Jeong ,  Kinam Kim ,  Moonsung Kim

IPC: H01L27/14 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786 ,  H01L29/49

Abstract: A display apparatus that includes a substrate, a first thin-film transistor and a second, thin-film transistor disposed on the substrate at different distances from a top surface of the substrate. A display device is electrically connected to the first thin-film transistor. The first thin-film transistor includes a first semiconductor layer in polycrystalline silicon and a first gate electrode that overlaps a channel region of the first semiconductor layer in a direction of a thickness of the substrate. The second thin-film transistor includes a second semiconductor layer including an oxide semiconductor. The first gate electrode has a stacked structure including a first layer and a second layer. The second layer includes titanium and the first layer includes a different material from the second layer.

公开(公告)号：US20250048890A1

公开(公告)日：2025-02-06

申请号：US18675142

申请日：2024-05-28

Applicant: Samsung Display Co., Ltd.

Inventor： Donghyun Gong ,  Moonsung Kim ,  Junsu Park ,  Hyunsang Seo ,  Seokkyu Han

IPC: H10K59/80 ,  H10K59/12

Abstract: A display apparatus includes a substrate, an organic light-emitting device disposed over the substrate, a first inorganic encapsulation layer covering the organic light-emitting device, an organic encapsulation layer on the first inorganic encapsulation layer, a second inorganic encapsulation layer on the organic encapsulation layer, and a third inorganic encapsulation layer on the second inorganic encapsulation layer, wherein the third inorganic encapsulation layer is thicker than the second inorganic encapsulation layer, and the second inorganic encapsulation layer has a thickness of about 400 Å to about 1800 Å.

公开(公告)号：US20240402853A1

公开(公告)日：2024-12-05

申请号：US18617457

申请日：2024-03-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JUNSU PARK ,  Bohwa Kim ,  Dong-Hyun Gong ,  Moonsung Kim

IPC: G06F3/044 ,  H10K59/131 ,  H10K59/40 ,  H10K59/80

Abstract: An electronic device includes a base layer, a circuit layer disposed on the base layer and including a transistor, a plurality of inorganic films, and a plurality of organic films. A display element layer is disposed on the circuit layer. An encapsulation layer is disposed on the display element layer. An input sensor is disposed on the encapsulation layer and includes a sensor base layer, a sensor conductive layer disposed on the sensor base layer, and a sensor insulating layer disposed on the sensor base layer and including silicon nitride (SiNx). The sensor base layer includes a buffer insulating layer including silicon (Si) and oxygen (O), and an atomic percent of oxygen (O) in the buffer insulating layer is in a range of 2 at % to 67 at %.

公开(公告)号：US11825704B2

公开(公告)日：2023-11-21

申请号：US17331606

申请日：2021-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Moonsung Kim ,  Younggil Park ,  Jaebum Han ,  Sooim Jeong

IPC: H10K59/124 ,  H10K71/00

CPC classification number: H10K59/124 ,  H10K71/00

Abstract: An embodiment of a display apparatus includes a substrate, a buffer layer on the substrate, a thin film transistor including a semiconductor layer disposed on the buffer layer and including a silicon semiconductor, and a gate electrode insulated from the semiconductor layer, and an insulating layer covering the semiconductor layer, in which a concentration of fluorine at an interface between the semiconductor layer and the buffer layer is at least 10% of a concentration of the fluorine at the interface between the semiconductor layer and the insulating layer.

公开(公告)号：US20220181416A1

公开(公告)日：2022-06-09

申请号：US17331606

申请日：2021-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Moonsung Kim ,  Younggil Park ,  Jaebum Han ,  Sooim Jeong

IPC: H01L27/32 ,  H01L51/56

Abstract: An embodiment of a display apparatus includes a substrate, a buffer layer on the substrate, a thin film transistor including a semiconductor layer disposed on the buffer layer and including a silicon semiconductor, and a gate electrode insulated from the semiconductor layer, and an insulating layer covering the semiconductor layer, in which a concentration of fluorine at an interface between the semiconductor layer and the buffer layer is at least 10% of a concentration of the fluorine at the interface between the semiconductor layer and the insulating layer.