公开(公告)号：US20160218197A1

公开(公告)日：2016-07-28

申请号：US14956056

申请日：2015-12-01

Applicant: Samsung Display Co., Ltd.

Inventor： Myung Kwan RYU ,  Ki Hwan KIM ,  Kap Soo YOON ,  Hyeon Jun LEE ,  Jeong Uk HEO

IPC: H01L29/66 ,  H01L21/306 ,  H01L29/417 ,  H01L21/324 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/66742 ,  H01L21/324 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78666 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869

Abstract: There are provided a method of manufacturing a thin film transistor and a display including a thin film transistor.The method of manufacturing a thin film transistor includes forming a barrier layer cm a substrate, forming a semiconductor layer on the barrier layer, forming a gate insulating layer on the semiconductor layer, forming a gate electrode on the gate insulating layer, forming an offset region on an external surface of the gate electrode through a plasma heat treatment process or an annealing process, etching, an offset region of the gate electrode, etching a gate insulating layer except for a portion of the gate insulating layer, positioned below the gate electrode, forming an interlayer insulating layer on the gate electrode, and etching, the interlayer insulating layer to form a source electrode and a drain electrode.

Abstract translation: 提供了制造薄膜晶体管的方法和包括薄膜晶体管的显示器。 制造薄膜晶体管的方法包括在衬底上形成衬底，在阻挡层上形成半导体层，在半导体层上形成栅极绝缘层，在栅极绝缘层上形成栅电极，形成偏移区域 通过等离子体热处理工艺或退火工艺在栅电极的外表面上蚀刻栅电极的偏移区域，蚀刻位于栅电极下方的栅绝缘层以外的栅极绝缘层， 在所述栅电极上形成层间绝缘层，并蚀刻所述层间绝缘层以形成源电极和漏电极。