DISPLAY DEVICE
    3.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20230329075A1

    公开(公告)日:2023-10-12

    申请号:US18334539

    申请日:2023-06-14

    Abstract: A display device includes a substrate, a semiconductor layer on the substrate, the semiconductor layer comprising a first semiconductor portion, a first insulating layer on the semiconductor layer, a first gate electrode on the first insulating layer and overlapping the first semiconductor portion, a scan line disposed on the first insulating layer and extending in a first direction, a second insulating layer on the first gate electrode and the scan line, a data line on the second insulating layer, and a first driving voltage line on the second insulating layer. The first driving voltage line may include a first portion extending in a second direction crossing the first direction, and a second portion expanding from the first portion in the first direction. The first portion may overlap the scan line, and the second portion may overlap the first gate electrode in a plan view to form a storage capacitor.

    DISPLAY DEVICE
    4.
    发明申请

    公开(公告)号:US20210013456A1

    公开(公告)日:2021-01-14

    申请号:US17036056

    申请日:2020-09-29

    Abstract: A display device includes a substrate, a semiconductor layer on the substrate, the semiconductor layer comprising a first semiconductor portion, a first insulating layer on the semiconductor layer, a first gate electrode on the first insulating layer and overlapping the first semiconductor portion, a scan line disposed on the first insulating layer and extending in a first direction, a second insulating layer on the first gate electrode and the scan line, a data line on the second insulating layer, and a first driving voltage line on the second insulating layer. The first driving voltage line may include a first portion extending in a second direction crossing the first direction, and a second portion expanding from the first portion in the first direction. The first portion may overlap the scan line, and the second portion may overlap the first gate electrode in a plan view to form a storage capacitor.

    DISPLAY DEVICE
    5.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20190181391A1

    公开(公告)日:2019-06-13

    申请号:US16274728

    申请日:2019-02-13

    Abstract: An organic light emitting diode display device includes a first driving voltage line including a first portion extending in a first direction and a second portion having a larger width than the first portion in a second direction perpendicular to the first direction. The second portion overlaps a gate electrode of a driving thin film transistor, an interlayer insulating layer is between the second portion and the gate electrode of the driving thin film transistor.

    DISPLAY DEVICE
    6.
    发明申请

    公开(公告)号:US20250048910A1

    公开(公告)日:2025-02-06

    申请号:US18923000

    申请日:2024-10-22

    Abstract: A display device includes a substrate, a semiconductor layer on the substrate, the semiconductor layer comprising a first semiconductor portion, a first insulating layer on the semiconductor layer, a first gate electrode on the first insulating layer and overlapping the first semiconductor portion, a scan line disposed on the first insulating layer and extending in a first direction, a second insulating layer on the first gate electrode and the scan line, a data line on the second insulating layer, and a first driving voltage line on the second insulating layer. The first driving voltage line may include a first portion extending in a second direction crossing the first direction, and a second portion expanding from the first portion in the first direction. The first portion may overlap the scan line, and the second portion may overlap the first gate electrode in a plan view to form a storage capacitor.

    DISPLAY DEVICE
    8.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20200083491A1

    公开(公告)日:2020-03-12

    申请号:US16685089

    申请日:2019-11-15

    Abstract: An organic light emitting diode display device includes a first driving voltage line including a first portion extending in a first direction and a second portion having a larger width than the first portion in a second direction perpendicular to the first direction. The second portion overlaps a gate electrode of a driving thin film transistor, an interlayer insulating layer is between the second portion and the gate electrode of the driving thin film transistor.

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