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公开(公告)号：US12075655B2
公开(公告)日：2024-08-27
申请号：US17151883
申请日：2021-01-19
发明人： Myoung Geun Cha , Sang Gun Choi , Sang Sub Kim , Ji Yeong Shin , Yong Su Lee , Ki Seok Choi
IPC分类号： H01L27/12 , H10K59/121 , H10K59/123 , H10K59/124
CPC分类号： H10K59/1213 , H10K59/1216 , H10K59/123 , H10K59/124
摘要： An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.
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公开(公告)号：US10930725B2
公开(公告)日：2021-02-23
申请号：US16575643
申请日：2019-09-19
发明人： Myoung Geun Cha , Sang Gun Choi , Sang Sub Kim , Ji Yeong Shin , Yong Su Lee , Ki Seok Choi
IPC分类号： H01L27/32
摘要： An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.
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公开(公告)号：US11309373B2
公开(公告)日：2022-04-19
申请号：US16838931
申请日：2020-04-02
发明人： Keun Woo Kim , Yong Su Lee , Myoung Geun Cha , Doo Na Kim , Sang Sub Kim , Jae Hwan Chu , Sang Gun Choi
摘要： A display device includes: a pixel at a display region. The pixel includes: a light-emitting element connected between a first power source and a second power source; and a first transistor connected between the first power source and the light-emitting element, the first transistor to control a driving current of the light-emitting element in response to a voltage of a first node. The first transistor includes a first driving transistor and a second driving transistor that are connected in series with each other between the first power source and the light-emitting element, and the first driving transistor and the second driving transistor have structures that are asymmetric with each other in a cross-sectional view.
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公开(公告)号：US12015088B2
公开(公告)日：2024-06-18
申请号：US18122815
申请日：2023-03-17
发明人： Sang Sub Kim , Keun Woo Kim , Ji Yeong Shin , Yong Su Lee , Myoung Geun Cha , Ki Seok Choi , Sang Gun Choi
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66 , H10K59/121 , G09G3/32 , H01L21/225 , H01L21/265 , H01L21/28 , H10K59/12
CPC分类号： H01L29/78603 , H01L27/1274 , H01L29/6675 , H10K59/1213 , G09G3/32 , G09G2300/0809 , H01L21/2253 , H01L21/26533 , H01L21/28158 , H01L27/1255 , H10K59/1201
摘要： A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.
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公开(公告)号：US11011597B2
公开(公告)日：2021-05-18
申请号：US16842239
申请日：2020-04-07
发明人： Sang Sub Kim , Mee Jae Kang , Han Bit Kim , Yong Su Lee
IPC分类号： H01L27/32 , H01L29/786 , G09G3/3266 , H01L29/66 , G09G3/3275
摘要： A display device includes scan lines for scan signals, data lines for data voltages, and pixels connected to the scan and data lines, where each of the pixels includes a first transistor configured to control a driving current which flows from a first electrode to a second electrode according to a voltage applied to a gate electrode, a light-emitting element connected to the second electrode and configured to emit light according to the driving current, and a third transistor electrically connected between the gate electrode and the second electrode, the third transistor includes an active layer including a first region connected to the second electrode of the first transistor, a second region connected to the gate electrode of the first transistor, and a channel region between the first region and the second region, and electrical resistance of the second region is greater than electrical resistance of the first region.
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公开(公告)号：US11881487B2
公开(公告)日：2024-01-23
申请号：US17386854
申请日：2021-07-28
发明人： Han Bit Kim , Mee Jae Kang , Keun Woo Kim , Doo-Na Kim , Sang Sub Kim , Do Kyeong Lee , Jae Hwan Chu
IPC分类号： H01L27/12 , H01L27/15 , H10K59/121
CPC分类号： H01L27/1222 , H01L27/124 , H01L27/156 , H10K59/1213
摘要： A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.
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公开(公告)号：US11626429B2
公开(公告)日：2023-04-11
申请号：US17071579
申请日：2020-10-15
发明人： Sang Sub Kim , Keun Woo Kim , Ji Yeong Shin , Yong Su Lee , Myoung Geun Cha , Ki Seok Choi , Sang Gun Choi
IPC分类号： H01L29/786 , H01L27/12 , H01L27/32 , H01L21/225 , H01L21/28 , G09G3/32 , H01L21/265
摘要： A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.
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公开(公告)号：US11437455B2
公开(公告)日：2022-09-06
申请号：US16856780
申请日：2020-04-23
发明人： Keun Woo Kim , Hye Na Kwak , Doo Na Kim , Sang Sub Kim , Thanh Tien Nguyen , Yong Su Lee , Jae Hwan Chu
IPC分类号： G09G3/3233 , H01L27/32 , H01L27/12 , H01L29/786 , H01L29/66
摘要： A display device includes a pixel disposed in a display region. The pixel includes a light-emitting element connected between a first power source and a second power source; a first transistor connected between the first power source and the light-emitting element to control a driving current flowing in the light-emitting element in response to a voltage of a first node; and at least one switching transistor to transmit a data signal or a voltage of an initialization power source to the first node. The switching transistor includes a first channel region, a first conductive region and a second conductive region which are respectively disposed at opposite sides of the first channel region, and a first wide band-gap region disposed between the first channel region and the second conductive region.
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