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    Organic light emitting device
    2.
    发明授权
    Organic light emitting device 有权

    公开(公告)号：US10439169B2

    公开(公告)日：2019-10-08

    申请号：US15813563

    申请日：2017-11-15

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Jae Yong Lee ,  Ill Soo Park ,  Seul Ong Kim ,  Chi Yeoung Shim

    IPC: H01L21/00 ,  H01L51/56 ,  H01L27/32 ,  H01L51/00 ,  H01L51/50

    Abstract: A method of forming a thin film includes preparing a mixture including a light emitting layer material that forms a light emitting layer and a material that forms a layer adjacent to the light emitting layer, and sequentially laminating the light emitting layer and the layer adjacent to the light emitting layer onto a substrate inside a chamber by heating the mixture to a process temperature of the light emitting layer material and a process temperature of the additional material. The light emitting layer material and the additional material have process temperatures that are different from each other. The light emitting layer material and the additional material are laminated onto the substrate sequentially from one of the light emitting layer material and the additional material having a lower process temperature to one of the light emitting layer material and the additional material having a higher process temperature.

    ORGANIC LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME
    3.
    发明申请
    ORGANIC LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20190088896A1

    公开(公告)日：2019-03-21

    申请号：US15957667

    申请日：2018-04-19

    Applicant: Samsung Display Co., Ltd.

    Inventor： Sung Wook Kim ,  Sung-Soo Bae ,  Hye In Jeong ,  Dong Hyun Kim ,  Seul Ong Kim ,  Tsuyoshi Naijo ,  Hwan Hee Cho

    IPC: H01L51/50 ,  H01L27/32 ,  H01L51/56

    Abstract: An organic light emitting device includes: a first electrode; a second electrode that overlaps the first electrode; and an organic layer that is disposed between the first electrode and the second electrode, wherein the organic layer comprises a hole transport region that includes a hole transport material and a p-dopant, and wherein when a doping amount of the p-dopant doped to the hole transport region exceeds 1 wt %, the following Equation 1 is satisfied, while when the doping amount of the p-dopant is 1 wt % or less than 1 wt %, the following Equation 2 is satisfied: HOMO_HTM−LUMO_p-dopant −0.05 eV   [Equation 2] In Equation 1 and Equation 2, HOMO_HTM denotes HOMO energy of the hole transport material and LUMO_p-dopant denotes LUMO energy of the p-dopant.

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