公开(公告)号：US11362162B2

公开(公告)日：2022-06-14

申请号：US16132031

申请日：2018-09-14

Applicant: Samsung Display Co., Ltd.

Inventor： Myung Soo Huh ,  Dong Kyun Ko ,  Sung Chui Kim ,  Woo Jin Kim ,  Cheol Lae Roh ,  Keun Hee Park

IPC: H01L27/32 ,  H01L21/02 ,  H01L49/02 ,  H01L51/52 ,  H01L27/12

Abstract: A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.