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公开(公告)号:US20220335742A1
公开(公告)日:2022-10-20
申请号:US17677031
申请日:2022-02-22
发明人: TAESUNG KIM , YUNJONG YEO , HYUNMIN CHO , BOKWANG SONG , BYUNG HAN YOO
IPC分类号: G06V40/13
摘要: An electronic device includes a display panel, a biometric information sensing layer disposed under the display panel and including a sensor, and an optical pattern layer disposed between the display panel and the biometric information sensing layer and including a plurality of transmissive portions and a light blocking portion. The light blocking portion includes a light blocking layer disposed on the biometric information sensing layer, an intermediate layer disposed on the light blocking layer, and a metal layer disposed on the intermediate layer.
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公开(公告)号:US20240324424A1
公开(公告)日:2024-09-26
申请号:US18429257
申请日:2024-01-31
发明人: SUBIN BAE , JAEHUN LEE , YANG-HO JUNG , TAESUNG KIM , YUNJONG YEO
CPC分类号: H10K59/8792 , H10K59/1201
摘要: A display device including a display element layer including a light-emitting element and a pixel-defining film; and a light control layer on the display element layer, and including a first light-blocking portion, a second light-blocking portion spaced apart from the first light-blocking portion in one direction perpendicular to a thickness direction, and a transmission portion between the first light-blocking portion and the second light-blocking portion, wherein the first light-blocking portion includes a first region, and a second region extending from the first region, and crossing the first region, and the second light-blocking portion includes a third region parallel to the first region, and a fourth region extending from the third region in a direction opposite to the second region.
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公开(公告)号:US20240074234A1
公开(公告)日:2024-02-29
申请号:US18188952
申请日:2023-03-23
发明人: KYONG-CHOL LEE , YUNJONG YEO , TAESUNG KIM , HYUNMIN CHO , YEONHONG KIM
IPC分类号: H10K59/121 , H10K59/12 , H10K71/00 , H01L29/786 , H01L29/423 , H01L29/66
CPC分类号: H10K59/1213 , H10K59/1201 , H10K71/00 , H01L29/7869 , H01L29/42384 , H01L29/66742
摘要: A display device includes a first transistor including a first active pattern including a first oxide semiconductor, and a first gate electrode which is on the first active pattern, a second transistor including a second active pattern including a second oxide semiconductor different from the first oxide semiconductor, and a second gate electrode which is on the second active pattern, a first gate insulating pattern between the second active pattern and the second gate electrode, a second gate insulating pattern facing the first gate insulating pattern with the second active pattern therebetween, and a third gate insulating pattern between the first active pattern and the first gate electrode, the third gate insulating pattern directly contacting the first active pattern and the first gate electrode.
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