公开(公告)号：US20230119564A1

公开(公告)日：2023-04-20

申请号：US18083722

申请日：2022-12-19

Applicant: Samsung Display Co., Ltd.

Inventor： Taekhoon KIM ,  Shin Ae JUN ,  Yong Wook KIM ,  Tae Gon KIM ,  Garam PARK

IPC: C09K11/88 ,  C09K11/08 ,  C09K11/02 ,  H10K59/38

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, tellurium, and selenium, wherein the quantum dot does not include cadmium, and the semiconductor nanocrystal shell has a mole ratio of tellurium to selenium of less than about 0.025:1, a composition including the quantum dot, a quantum dot-polymer composite, a patterned layer including the composite, and an electronic device including the patterned layer.

公开(公告)号：US20210147749A1

公开(公告)日：2021-05-20

申请号：US16950994

申请日：2020-11-18

Applicant: Samsung Display Co., Ltd.

Inventor： Taekhoon KIM ,  Shin Ae JUN ,  Yong Wook KIM ,  Tae Gon KIM ,  Garam PARK

IPC: C09K11/88 ,  C09K11/08 ,  C09K11/02 ,  H01L27/32

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, tellurium, and selenium, wherein the quantum dot does not include cadmium, and the semiconductor nanocrystal shell has a mole ratio of tellurium to selenium of less than about 0.025:1, a composition including the quantum dot, a quantum dot-polymer composite, a patterned layer including the composite, and an electronic device including the patterned layer.