公开(公告)号：US20160133725A1

公开(公告)日：2016-05-12

申请号：US14842638

申请日：2015-09-01

Applicant: Samsung Display Co., Ltd.

Inventor： Youngjun Chung ,  Hyunduck Cho

IPC: H01L29/66 ,  H01L29/167 ,  H01L29/45 ,  H01L21/28 ,  H01L27/32 ,  H01L29/10 ,  H01L29/36 ,  H01L27/12 ,  H01L29/417 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L29/66757 ,  H01L21/28017 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

Abstract: A method of manufacturing a thin-film transistor (TFT) having uniform performance in terms of threshold voltage and the like, the TFT, and a display apparatus including the same are disclosed. The method includes: (i) forming a polysilicon layer having a source region, a drain region, and a channel region between the source region and the drain region; (ii) doping a central region in the channel region with a first impurity except for peripheral portions; and (iii) doping the source region and the drain region with a second impurity of a conductivity type that is different from that of the first impurity.

Abstract translation: 公开了一种制造在阈值电压等方面具有均匀性能的薄膜晶体管（TFT）的方法，TFT以及包括该薄膜晶体管的显示装置。 该方法包括：（i）在源极区域和漏极区域之间形成具有源极区域，漏极区域和沟道区域的多晶硅层; （ii）除了周边部分之外，用沟道区域中的第一杂质掺杂中心区域; 和（iii）用不同于第一杂质的导电类型的第二杂质掺杂源区和漏区。