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公开(公告)号：US20200058727A1
公开(公告)日：2020-02-20
申请号：US16521394
申请日：2019-07-24
Inventor： Sang Gab KIM , Hyun Min CHO , Tae Sung KIM , Yu-Gwang JEONG , Su Bin BAE , Jin Seock KIM , Sang Gyun KIM , Hyo Min KO , Kil Won CHO , Han Sol LEE
IPC: H01L27/32
Abstract: An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.
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公开(公告)号：US20210384287A1
公开(公告)日：2021-12-09
申请号：US17445471
申请日：2021-08-19
Inventor： Sang Gab KIM , Hyun Min CHO , Tae Sung KIM , Yu-Gwang JEONG , Su Bin BAE , Jin Seock KIM , Sang Gyun KIM , Hyo Min KO , Kil Won CHO , Hansol LEE
IPC: H01L27/32
Abstract: An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.
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公开(公告)号：US20240121989A1
公开(公告)日：2024-04-11
申请号：US18229766
申请日：2023-08-03
Applicant: Samsung Display Co., LTD.
Inventor： Da Woon JUNG , Su Bin BAE , Tae Wook KANG , Sang Gab KIM , Yun Jong YEO , Yu Gwang JEONG
IPC: H10K59/122 , H10K59/12 , H10K59/38 , H10K59/40
CPC classification number: H10K59/122 , H10K59/1201 , H10K59/38 , H10K59/40
Abstract: A display device includes: a first pixel electrode disposed in a first emission area, on a substrate; an insulating layer covering edges of the first pixel electrode; a first light-emitting layer disposed on the first pixel electrode and the insulating layer; a first common electrode disposed on the first light-emitting layer; banks disposed on the insulating layer and surrounding the first emission area; and a first organic pattern surrounding the first emission area, disposed on the banks, and including the same material as the first light-emitting layer. Side surfaces of each of the banks are spaced apart from side surfaces of the insulating layer.
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公开(公告)号：US20220165805A1
公开(公告)日：2022-05-26
申请号：US17467493
申请日：2021-09-07
Applicant: Samsung Display Co., LTD.
Inventor： Dae Won CHOI , Dong Won KIM , Sang Gab KIM , Sang Woo KIM , Gyu Jeong LEE , Sung Won CHO
Abstract: A display device includes a display panel including a main portion, a first bent portion and a second bent portion each extending from the main portion, and a corner portion which connects the first bent portion and the second bent portion to each other and is bendable relative to the main portion. The corner portion which is bendable includes a plurality of protrusion patterns partially disconnected from each other and each bendable relative to the main portion, and each of the plurality of protrusion patterns including a display pixel
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公开(公告)号：US20210376243A1
公开(公告)日：2021-12-02
申请号：US17255406
申请日：2018-12-21
Applicant: Samsung Display Co., LTD.
Inventor： Hyun Min CHO , Shin Il CHOI , Sang Gab KIM , Tae Sung KIM
Abstract: A method of manufacturing an organic light-emitting display device is provided. The method includes: forming a lower electrode pattern on a substrate, which includes a transistor area and a capacitor area, to correspond to the transistor area and forming a buffer layer on the substrate including the lower electrode pattern; forming a thin-film transistor including an oxide semiconductor layer on the buffer layer; forming an interlayer insulating film on the thin-film transistor; forming a photoresist film pattern including first and second holes, which have different depths, on the interlayer insulating film; and forming a first contact hole, which exposes the lower electrode pattern, and second contact holes, which expose the oxide semiconductor layer, at the same time using the photoresist film pattern.
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Patent Agency Ranking
公开(公告)号：US20210202653A1
公开(公告)日：2021-07-01
申请号：US17030951
申请日：2020-09-24
Applicant: Samsung Display Co., LTD.
Inventor： Hyun Min CHO , Sang Gab KIM , Tae Sung KIM
Abstract: A display device and a method of the display device are provided. The display device includes a lower metal layer on a substrate, a buffer layer on the lower metal layer, a first semiconductor layer on the buffer layer, a gate insulating layer on the first semiconductor layer, a first gate electrode on the gate insulating layer, an interlayer insulating layer on the first gate electrode, a via layer on the interlayer insulating layer, a pixel electrode on the via layer and electrically connected to the first semiconductor layer, a light emitting layer on the pixel electrode, a common electrode on the light emitting layer, a first contact hole penetrating the buffer layer and the interlayer insulating layer and a second contact hole penetrating the interlayer insulating layer, and a first via hole and a second via hole each penetrating the via layer.
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公开(公告)号：US20210013288A1
公开(公告)日：2021-01-14
申请号：US16899782
申请日：2020-06-12
Applicant: Samsung Display Co., LTD.
Inventor： Sang Gab KIM , Tae Sung KIM , Joon Geol LEE , Hyun Min CHO , Dae Won CHOI , Yun Jong YEO
IPC: H01L27/32
Abstract: A display device includes a base substrate; an organic layer disposed on the base substrate; and a first conductive layer disposed on the organic layer, wherein the first conductive layer includes a plurality of stacked films, the plurality of stacked films include a first conductive film disposed directly on the organic layer and a second conductive film disposed on the first conductive film, and the first conductive film has an oxygen concentration higher than an oxygen concentration of the second conductive film.
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8.发明申请公开(公告)号：US20190165083A1
公开(公告)日：2019-05-30
申请号：US16164796
申请日：2018-10-19
Applicant: Samsung Display Co., Ltd.
Inventor： Joon Geol LEE , Kyeong Su KO , Sang Won SHIN , Dong Min LEE , Sang Gab KIM , Sang Woo SOHN , Hyun Eok SHIN , Shin Il CHOI
Abstract: A conductive pattern for a display device includes a first layer including aluminum or an aluminum alloy disposed on a substrate and forming a first taper angle with the substrate, and a second layer disposed on the first layer forming a second taper angle with the first layer, in which the second taper angle is smaller than the first taper angle.
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公开(公告)号：US20250040360A1
公开(公告)日：2025-01-30
申请号：US18632476
申请日：2024-04-11
Applicant: Samsung Display Co., LTD.
Inventor： Hee Sung YANG , Su Kyeong SHIN , Woo Jin CHO , Sang Gab KIM , Joon Hwa BAE
IPC: H10K59/124
Abstract: A display device includes: a substrate; a thin film transistor positioned on the substrate and including a source electrode, a drain electrode, and an active layer positioned between the source electrode and the drain electrode; a gate electrode positioned on the thin film transistor and overlapping the active layer in a plan view; a gate protection layer positioned on the gate electrode and overlapping the active layer in the plan view; an insulating layer positioned on the gate protection layer; and a gate cover layer positioned between side surfaces of the gate electrode and the insulating layer, where the gate cover layer includes a first portion and a second portion spaced apart from the first portion with the gate electrode interposed therebetween, and the first portion and the second portion are in contact with the gate protection layer.
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公开(公告)号：US20190280067A1
公开(公告)日：2019-09-12
申请号：US16260293
申请日：2019-01-29
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Yu-Gwang JEONG , Su Bin BAE , Joon Geol LEE , Sang Gab KIM , Shin Il CHOI
IPC: H01L27/32
Abstract: A display device and a method for manufacturing a display device, the device including a semiconductor layer on a substrate; a gate insulation layer and an interlayer insulation layer that overlap the semiconductor layer; contact holes that penetrate the gate insulation layer and the interlayer insulation layer; a source electrode and a drain electrode that are electrically connected with the semiconductor layer through the contact holes; a light emitting diode that is connected with the drain electrode; and first spacers and second spacers between the source electrode and the interlayer insulation layer and between the drain electrode and the interlayer insulation layer in the contact holes.
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