公开(公告)号：US20190280067A1

公开(公告)日：2019-09-12

申请号：US16260293

申请日：2019-01-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yu-Gwang JEONG ,  Su Bin BAE ,  Joon Geol LEE ,  Sang Gab KIM ,  Shin Il CHOI

IPC: H01L27/32

Abstract: A display device and a method for manufacturing a display device, the device including a semiconductor layer on a substrate; a gate insulation layer and an interlayer insulation layer that overlap the semiconductor layer; contact holes that penetrate the gate insulation layer and the interlayer insulation layer; a source electrode and a drain electrode that are electrically connected with the semiconductor layer through the contact holes; a light emitting diode that is connected with the drain electrode; and first spacers and second spacers between the source electrode and the interlayer insulation layer and between the drain electrode and the interlayer insulation layer in the contact holes.

公开(公告)号：US20210013288A1

公开(公告)日：2021-01-14

申请号：US16899782

申请日：2020-06-12

Applicant: Samsung Display Co., LTD.

Inventor： Sang Gab KIM ,  Tae Sung KIM ,  Joon Geol LEE ,  Hyun Min CHO ,  Dae Won CHOI ,  Yun Jong YEO

IPC: H01L27/32

Abstract: A display device includes a base substrate; an organic layer disposed on the base substrate; and a first conductive layer disposed on the organic layer, wherein the first conductive layer includes a plurality of stacked films, the plurality of stacked films include a first conductive film disposed directly on the organic layer and a second conductive film disposed on the first conductive film, and the first conductive film has an oxygen concentration higher than an oxygen concentration of the second conductive film.

公开(公告)号：US20190165083A1

公开(公告)日：2019-05-30

申请号：US16164796

申请日：2018-10-19

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Geol LEE ,  Kyeong Su KO ,  Sang Won SHIN ,  Dong Min LEE ,  Sang Gab KIM ,  Sang Woo SOHN ,  Hyun Eok SHIN ,  Shin Il CHOI

IPC: H01L27/32 ,  H01L51/56

Abstract: A conductive pattern for a display device includes a first layer including aluminum or an aluminum alloy disposed on a substrate and forming a first taper angle with the substrate, and a second layer disposed on the first layer forming a second taper angle with the first layer, in which the second taper angle is smaller than the first taper angle.

公开(公告)号：US20200235196A1

公开(公告)日：2020-07-23

申请号：US16704437

申请日：2019-12-05

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Min LEE ,  Sang Woo SOHN ,  Do Keun SONG ,  Sang Won SHIN ,  Hyun Eok SHIN ,  Su Kyoung YANG ,  Kyeong Su KO ,  Sang Gab KIM ,  Joon Geol LEE

IPC: H01L27/32 ,  H01L27/12

Abstract: Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.

公开(公告)号：US20190172819A1

公开(公告)日：2019-06-06

申请号：US16027960

申请日：2018-07-05

Applicant: Samsung Display Co., Ltd.

Inventor： Su Bin BAE ,  Yu Gwang JEONG ,  Shin Il CHOI ,  Joon Geol LEE ,  Sang Gab KIM

IPC: H01L25/16 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L33/54

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

公开(公告)号：US20190081088A1

公开(公告)日：2019-03-14

申请号：US16124356

申请日：2018-09-07

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Min CHO ,  Shin Il CHOI ,  Kyeong Su KO ,  Sang Gab KIM ,  Joon Geol LEE

IPC: H01L27/12 ,  H01L29/45 ,  H01L21/3213 ,  H01L29/786

Abstract: A display device includes: a substrate; first and second transistors provided on the substrate to be spaced apart from each other, the first and second transistors being electrically connected to each other; and a display unit electrically connected to the first transistor, wherein the first transistor includes a first semiconductor layer including crystalline silicon, a first gate electrode, a first source electrode, and a first drain electrode, wherein the second transistor includes a second semiconductor layer including an oxide semiconductor, a second gate electrode, a second source electrode, and a second drain electrode, wherein each of the second source electrode and the second drain electrode includes a first layer that includes molybdenum and is provided on the second semiconductor layer, a second layer that includes aluminum and is provided on the first layer, and a third layer that includes titanium and is provided on the second layer.

公开(公告)号：US20230387096A1

公开(公告)日：2023-11-30

申请号：US18233190

申请日：2023-08-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Su Bin BAE ,  Yu Gwang JEONG ,  Shin Il CHOI ,  Joon Geol LEE ,  Sang Gab KIM

IPC: H01L25/16 ,  H01L33/20 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62 ,  H01L25/075 ,  H01L21/306 ,  H01L33/00

CPC classification number: H01L25/167 ,  H01L33/20 ,  H01L33/44 ,  H01L33/54 ,  H01L27/124 ,  H01L25/0753 ,  H01L21/30621 ,  H01L33/005 ,  H01L2933/005 ,  H01L33/62

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

公开(公告)号：US20220005799A1

公开(公告)日：2022-01-06

申请号：US17479928

申请日：2021-09-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Su Bin BAE ,  Yu Gwang JEONG ,  Shin Il CHOI ,  Joon Geol LEE ,  Sang Gab KIM

IPC: H01L25/16 ,  H01L33/20 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62 ,  H01L25/075 ,  H01L21/306 ,  H01L33/00

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

公开(公告)号：US20200091393A1

公开(公告)日：2020-03-19

申请号：US16691495

申请日：2019-11-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Su Bin BAE ,  Yu Gwang JEONG ,  Shin Il CHOI ,  Joon Geol LEE ,  Sang Gab KIM

IPC: H01L33/62 ,  H01L33/00 ,  H01L21/306

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

公开(公告)号：US20200075707A1

公开(公告)日：2020-03-05

申请号：US16409991

申请日：2019-05-13

Applicant: Samsung Display Co., Ltd.

Inventor： Kyeong Su KO ,  Joon Geol LEE ,  Shin Il CHOI ,  Sang Gab KIM ,  Hyun Min CHO ,  Hyun Eok SHIN

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/00 ,  H01L51/05

Abstract: An OLED display according to an exemplary embodiment includes: a substrate; a gate insulation layer that is disposed on the substrate; and a gate wire that is disposed on the gate insulation layer, and includes a gate electrode, wherein the gate wire includes a single layer of aluminum or an aluminum alloy, and an angle formed by side surfaces of the gate wire and the gate insulation layer is less than 65°.