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公开(公告)号：US20220064527A1
公开(公告)日：2022-03-03
申请号：US17365887
申请日：2021-07-01
发明人： Sunyoung KWON , Wan Ki BAE , Donghyo HAHM , Keunchan OH , Hyeokjin LEE , Seong-Pil HUH
摘要： A quantum dot includes a first core layer and a shell layer surrounding the first core layer, wherein a difference in lattice constants between the first core layer and the shell layer is controlled to be 3% or less. The quantum dot according to an embodiment may be applied to a light emitting element and a display device, thereby providing improved luminous efficiency.
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公开(公告)号：US20210257573A1
公开(公告)日：2021-08-19
申请号：US17171893
申请日：2021-02-09
发明人： MINKI NAM , SUNGWOON KIM , YUNHYUK KO , Wan Ki BAE , SOOHO LEE , Byeong Guk JEONG , YUNKU JUNG
摘要： A quantum dot includes a core and a plurality of shell layers surrounding the core. The core has a band gap less than that of the outermost shell layer, and the outermost shell layer has a band gap less than that of a second shell layer. Thus, a light emitting device including the quantum dot according to an embodiment may have an improved lifespan of the device and excellent luminous efficiency characteristics.
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公开(公告)号：US20180291268A1
公开(公告)日：2018-10-11
申请号：US15860902
申请日：2018-01-03
申请人： SAMSUNG DISPLAY CO., LTD. , KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Min Ki NAM , Kyoung Won PARK , Keun Chan OH , Jae Jin LYU , Baek Hee LEE , Hyeok Jin LEE , Jaikyeong KIM , Heesuk KIM , Wan Ki BAE , Doh Chang LEE
IPC分类号： C09K11/88
摘要： A method of manufacturing a quantum dot, the method including preparing a CdS/CdSe/CdS quantum dot that includes a CdS-containing first core, a CdSe-containing second core, and a CdS-containing shell; forming a Cu2S/Cu2Se/Cu2S quantum dot by injecting the CdS/CdSe/CdS quantum dot into a solution containing a Cu precursor; and forming a ZnS/ZnSe/ZnS quantum dot by injecting the Cu2S/Cu2Se/Cu2S quantum dot into a solution containing a Zn precursor.
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