公开(公告)号：US20220292245A1

公开(公告)日：2022-09-15

申请号：US17554517

申请日：2021-12-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Akio MISAKA ,  Jongdoo KIM ,  Noyoung CHUNG

IPC: G06F30/392 ,  G06F30/398 ,  H01L27/02 ,  G03F7/20

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes generating a first virtual layout by placing and routing standard cells using a virtual netlist, searching first duplicate pattern regions in the first virtual layout and choosing one of them as a first representative pattern region, performing an OPC operation on the first representative pattern region to obtain a first OPC result, generating an actual layout by placing and routing standard cells using an actual netlist, performing an OPC operation on the actual layout, and forming a photoresist pattern on a substrate using a photomask manufactured based on the actual layout, to which the OPC operation is applied.

公开(公告)号：US20220121107A1

公开(公告)日：2022-04-21

申请号：US17360365

申请日：2021-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Akio MISAKA ,  Changsoo KIM ,  Noyoung CHUNG

IPC: G03F1/36 ,  G06F30/392

Abstract: A non-transitory computer-readable medium storing codes that, when executed by a processor, cause the processor to perform operations of receiving full chip data including specific patterns of a first layout, extracting a representative pattern of the first layout from the full chip data, generating a vector of the extracted representative pattern, generating a first data set based on the generated vector, generating a machine learning model by performing machine learning with respect to the first data set, executing an optical proximity correction (OPC) with respect to the specific patterns of the first layout by using the machine learning model, and generating a second layout based on a result of executing the OPC may be provided.