公开(公告)号：US20210110997A1

公开(公告)日：2021-04-15

申请号：US16850252

申请日：2020-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkyu SHIN ,  Sangki NAM ,  Soonam PARK ,  Akira KOSHIISHI ,  Kyuhee HAN

IPC: H01J37/32 ,  H01J37/063 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065

Abstract: An electron beam generator, a plasma processing apparatus, and a plasma processing method, the electron beam generator including a side insulator configured to surround the substrate support, the side insulator having an electron beam chamber therein; a first electrode embedded in the side insulator and adjacent to a first side wall of the electron beam chamber; a second electrode on a second side wall of the electron beam chamber; and a guide in an outlet of the electron beam chamber, the guide including slits through which electron beams generated in the electron beam chamber are transmittable into the process chamber.

公开(公告)号：US20190122866A1

公开(公告)日：2019-04-25

申请号：US15983178

申请日：2018-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ki Nam ,  Akira KOSHIISHI ,  Kwangyoub HEO ,  Sunggil KANG ,  Beomjin YOO ,  Sungyong LIM ,  Vasily PASHKOVSKIY

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/3065

Abstract: Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.