公开(公告)号：US09275725B2

公开(公告)日：2016-03-01

申请号：US14195049

申请日：2014-03-03

申请人： Samsung Electronics Co., Ltd.

发明人： Alexander Stepanov

IPC分类号： G11C11/419 ,  G11C27/02 ,  G11C11/412

CPC分类号： G11C11/419 ,  G11C11/412 ,  G11C27/02 ,  G11C27/024

摘要： A memory device includes a memory cell, a sensing circuit connected to sense data stored in a memory cell and to connect the memory cell by first and second paths separate from one another A sample and hold circuit connected between the memory cell and the sensing circuit may separate a period during which voltages of the first and second paths are developed by the data stored in the memory cell from a period during which the sensing circuit senses the data stored in the memory cell by detecting the developed voltages of the first and second paths.

摘要翻译： 存储器件包括存储器单元，感测电路，连接到感测存储在存储单元中的数据，并且通过彼此分离的第一和第二路径来连接存储器单元。连接在存储单元和感测电路之间的采样和保持电路可以 从感测电路通过检测第一和第二路径的显影电压来感测存储在存储单元中的数据的周期，分离存储在存储单元中的数据来显现第一和第二路径的电压的时段。

公开(公告)号：US20140328114A1

公开(公告)日：2014-11-06

申请号：US14195049

申请日：2014-03-03

申请人： Samsung Electronics Co., Ltd.

发明人： Alexander Stepanov

IPC分类号： G11C7/08 ,  G11C11/419

CPC分类号： G11C11/419 ,  G11C11/412 ,  G11C27/02 ,  G11C27/024

摘要： A memory device includes a memory cell, a sensing circuit connected to sense data stored in a memory cell and to connect the memory cell by first and second paths separate from one another A sample and hold circuit connected between the memory cell and the sensing circuit may separate a period during which voltages of the first and second paths are developed by the data stored in the memory cell from a period during which the sensing circuit senses the data stored in the memory cell by detecting the developed voltages of the first and second paths.

摘要翻译： 存储器件包括存储器单元，感测电路，连接到感测存储在存储单元中的数据，并且通过彼此分离的第一和第二路径来连接存储器单元。连接在存储单元和感测电路之间的采样和保持电路可以 从感测电路通过检测第一和第二路径的显影电压来感测存储在存储单元中的数据的周期，分离存储在存储单元中的数据来显现第一和第二路径的电压的时段。