公开(公告)号：US11195568B1

公开(公告)日：2021-12-07

申请号：US17060913

申请日：2020-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Atishay ,  Anirudh B K ,  Rajeev Verma ,  Vishnu Charan Thummala

IPC: G11C11/406 ,  G11C29/42 ,  G11C11/4072

Abstract: Methods and systems for controlling refresh operations of a memory device. A method disclosed herein includes receiving, by a refresh controller of the memory device, a refresh command from a host for performing the refresh operation on a plurality of memory rows. The method further includes selecting, by the refresh controller, at least one memory row from the plurality of memory rows for the refresh operation using a refresh-row selection circuitry. The at least one memory row is selected by performing digital reading or analog reading of at least one row condition cell (RCC) and at least one supplemental cell that are connected to each memory row of the memory rows. The method further includes performing, by the refresh controller, the refresh operation on the selected at least one memory row.