公开(公告)号：US20200169347A1

公开(公告)日：2020-05-28

申请号：US16685354

申请日：2019-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGYOON CHO ,  JOOHYUN DO ,  MYUNGJOON SHIM ,  HAECHUL LEE ,  BORA LIM ,  DAHAE CHONG ,  SEUNGJOONG HWANG

IPC: H04J11/00 ,  H04W56/00 ,  H04W72/00

Abstract: An operating method of a terminal performing a cell search using first and second memories for buffering input samples includes detecting a first primary synchronization signal (PSS) group from a first input sample group while buffering the first input sample group in the first memory in a first interval. While buffering a second input sample group in the second memory in a second interval following the first interval, the method detects a second PSS group from the second input sample group, and a first secondary synchronization signal (SSS) group corresponding to the first PSS group from the first input sample group. While buffering a third input sample group in the first memory in a third interval following the second interval, the method detects a third PSS group from the third input sample group, and a second SSS group corresponding to the second PSS group from the second input sample group.

公开(公告)号：US20180240881A1

公开(公告)日：2018-08-23

申请号：US15692560

申请日：2017-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYUNHO JUNG ,  JEONGYUN LEE ,  TAESOON KWON ,  KYUNGSEOK MIN ,  GEUMJUNG SEONG ,  BORA LIM ,  A-REUM JI ,  SEUNGSOO HONG

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/06

CPC classification number: H01L29/4236 ,  H01L27/0924 ,  H01L29/0653

Abstract: A semiconductor device can include a first active pattern on a substrate, the first active pattern including a plurality of first active regions that protrude from the substrate. A second active pattern can be on the substrate including a plurality of second active regions that protrude from the substrate. A first gate electrode can include an upper portion that extends over the first active pattern at a first height and include a recessed portion that extends over the first active pattern at a second height that is lower than the first height of the first gate electrode. A second gate electrode can include an upper portion that extends over the second active pattern at a first height and include a recessed portion that extends over the second active pattern at a second height that is lower than the first height of the second gate electrode. An insulation pattern can be located between, and directly adjacent to, the recessed portion of the first gate electrode and the recessed portion of the second gate electrode, the insulation pattern electrically isolating the first and second gate electrodes from one another.