公开(公告)号：US20220328671A1

公开(公告)日：2022-10-13

申请号：US17539768

申请日：2021-12-01

申请人： Samsung Electronics Co., Ltd.

发明人： Changhyun KIM ,  Hyeonjin SHIN ,  Minhyun LEE ,  Taejin CHOI ,  Sangwon KIM ,  Bongseob YANG ,  Eunkyu LEE

IPC分类号： H01L29/76 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24

摘要： A field effect transistor structure is disclosed. The field effect transistor structure includes: a fin-shaped channel protruding from a substrate and extending in one direction; a source electrode on one side of the fin-shaped channel; a drain electrode separated from the source electrode with the fin-shaped channel therebetween; a gate insulating film surrounding side and upper surfaces of the fin-shaped channel; a gate electrode on the gate insulating film; and a two-dimensional semiconductor material layer between the gate insulating film and the gate electrode.

公开(公告)号：US20210313442A1

公开(公告)日：2021-10-07

申请号：US17060193

申请日：2020-10-01

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Bongseok SUH ,  Daewon KIM ,  Beomjin PARK ,  Sukhyung PARK ,  Sungil PARK ,  Jaehoon SHIN ,  Bongseob YANG ,  Junggun YOU ,  Jaeyun LEE

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L29/10

摘要： A semiconductor device includes a first active region defined on a substrate, a first gate electrode across the first active region, a first drain region in the first active region at a position adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on a side surface of the first gate electrode and extending into the undercut region.