公开(公告)号：US20230130236A1

公开(公告)日：2023-04-27

申请号：US17972869

申请日：2022-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hobin SONG ,  Yungeun NAM ,  Byeonggyu PARK ,  Jaehyun PARK ,  Hajung PARK ,  Junhan BAE

IPC: H04B1/18 ,  H04B17/21

Abstract: A device includes a receiver analog front-end circuit including a path shared by an internal loopback current path and a calibration current path, wherein the receiver analog front-end circuit is configured to perform an internal test using the internal loopback current path while in a test mode, and equalize a first data signal while in a normal mode, the equalizing the first data signal including removing an offset from the first data signal using the calibration current path.

公开(公告)号：US20230141789A1

公开(公告)日：2023-05-11

申请号：US17864736

申请日：2022-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunghye CHO ,  Kijun LEE ,  Myungkyu LEE ,  Eunae LEE ,  Byeonggyu PARK ,  Yeonggeol SONG

IPC: G11C11/406 ,  G11C11/4093

CPC classification number: G11C11/40615 ,  G11C11/4093 ,  G11C11/40618

Abstract: A semiconductor memory device includes a memory cell array including a plurality of memory cell rows, a row hammer management circuit, and a refresh control circuit. The row hammer management circuit captures row addresses accompanied by first active commands randomly selected from active commands, each of which has a first selection probability that is uniform, from an external memory controller during a reference time interval, and selects at least one row address from among the captured row addresses as a hammer address a number of times proportional to access counts of an active command corresponding to the at least one row address during the reference time interval. The refresh control circuit receives the hammer address and performs a hammer refresh operation on one or more victim memory cell rows which are physically adjacent to a memory cell row corresponding to the hammer address.