公开(公告)号：US20190326407A1

公开(公告)日：2019-10-24

申请号：US16200730

申请日：2018-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Seop YOON ,  Byoung Wook Jeong

IPC: H01L29/423 ,  H01L27/088

Abstract: A semiconductor device comprising a first field insulating film around at least a part of a first fin type pattern and at least a part of a second fin type pattern, a second field insulating film between the first fin type pattern and the second fin type pattern and protruding from the first field insulating film and a first gate structure which extends over the first and second field insulating films in a second direction intersecting with a first direction, and includes a first portion on the first field insulating film, and a second portion on the second field insulating film, wherein a first width of the first portion of the first gate structure is greater than a second width of the second portion of the first gate structure.

公开(公告)号：US10741659B2

公开(公告)日：2020-08-11

申请号：US16200730

申请日：2018-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Seop Yoon ,  Byoung Wook Jeong

IPC: H01L29/423 ,  H01L27/088

Abstract: A semiconductor device comprising a first field insulating film around at least a part of a first fin type pattern and at least a part of a second fin type pattern, a second field insulating film between the first fin type pattern and the second fin type pattern and protruding from the first field insulating film and a first gate structure which extends over the first and second field insulating films in a second direction intersecting with a first direction, and includes a first portion on the first field insulating film, and a second portion on the second field insulating film, wherein a first width of the first portion of the first gate structure is greater than a second width of the second portion of the first gate structure.