公开(公告)号：US10522682B2

公开(公告)日：2019-12-31

申请号：US15869522

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Seop Yoon ,  Byung Ha Choi ,  Dae Geun Kim ,  Su Min Kim ,  Se Wan Park ,  Ji Ho Lee

IPC: H01L29/78 ,  H01L21/768 ,  H01L29/417 ,  H01L27/088 ,  H01L21/8238 ,  H01L27/092

Abstract: A semiconductor device is provided. The semiconductor device includes a fin type pattern, a field insulating film on a part of a sidewall of the fin-type pattern, and a gate electrode intersecting with the fin-type pattern, on the fin-type pattern and the field insulating film. The gate electrode on the field insulating film includes a first portion, a second portion, and a third portion on the field insulating film. A first width of the first portion increases as a first distance from the field insulating film, increases width of the second portion decreases as a second distance from the field insulating film increases, and a third width of the third portion increases or is substantially constant as a third distance from the field insulating film increases.

公开(公告)号：US20190043981A1

公开(公告)日：2019-02-07

申请号：US15869522

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Seop Yoon ,  Byung Ha Choi ,  Dae Geun Kim ,  Su Min Kim ,  Se Wan Park ,  Ji Ho Lee

IPC: H01L29/78 ,  H01L29/417 ,  H01L21/768 ,  H01L27/088

CPC classification number: H01L29/785 ,  H01L21/76834 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/41791

Abstract: A semiconductor device is provided. The semiconductor device includes a fin type pattern, a field insulating film on a part of a sidewall of the fin-type pattern, and a gate electrode intersecting with the fin-type pattern, on the fin-type pattern and the field insulating film. The gate electrode on the field insulating film includes a first portion, a second portion, and a third portion on the field insulating film. A first width of the first portion increases as a first distance from the field insulating film, increases width of the second portion decreases as a second distance from the field insulating film increases, and a third width of the third portion increases or is substantially constant as a third distance from the field insulating film increases.

公开(公告)号：US10741659B2

公开(公告)日：2020-08-11

申请号：US16200730

申请日：2018-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Seop Yoon ,  Byoung Wook Jeong

IPC: H01L29/423 ,  H01L27/088

Abstract: A semiconductor device comprising a first field insulating film around at least a part of a first fin type pattern and at least a part of a second fin type pattern, a second field insulating film between the first fin type pattern and the second fin type pattern and protruding from the first field insulating film and a first gate structure which extends over the first and second field insulating films in a second direction intersecting with a first direction, and includes a first portion on the first field insulating film, and a second portion on the second field insulating film, wherein a first width of the first portion of the first gate structure is greater than a second width of the second portion of the first gate structure.

公开(公告)号：US10720449B2

公开(公告)日：2020-07-21

申请号：US16113363

申请日：2018-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Seop Yoon

IPC: H01L27/12 ,  H01L29/06 ,  H01L21/84 ,  H01L29/08 ,  H01L27/11 ,  H01L27/092

Abstract: A semiconductor device includes a substrate including a lower substrate layer, a buried insulation layer on the lower substrate layer, and an upper substrate layer on the buried insulation layer, a first trench passing through the upper substrate layer, the buried insulation layer, and a portion of the lower substrate layer, a second trench passing through the upper substrate layer, the buried insulation layer, and a portion of the lower substrate layer and being spaced apart from the first trench, a field insulation layer in a portion of the first trench and in a portion of the second trench, and a first fin pattern defined by the first trench and the second trench. An upper surface of the field insulation layer is higher than an upper surface of the buried insulation layer.