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1.发明授权公开(公告)号：US09440853B2
公开(公告)日：2016-09-13
申请号：US14610783
申请日：2015-01-30
发明人： Kimoon Lee , Byungki Ryu , Yoon Chul Son , Hyeon Cheol Park , Sang Mock Lee
IPC分类号： H01B1/06 , H01B1/10 , C01B25/14 , C01B19/00 , C01G28/00 , C01G30/00 , C01G29/00 , H01B1/02 , C01G27/00
CPC分类号： C01B25/14 , C01B19/002 , C01B19/007 , C01G27/006 , C01G28/002 , C01G29/006 , C01G30/002 , C01P2002/52 , C01P2002/72 , C01P2002/77 , C01P2006/40 , H01B1/02 , H01B1/06 , H01B1/10
摘要： A hafnium telluride compound includes a layered crystal structure and represented by the following Chemical Formula 1. Hf3Te2-xAx [Chemical Formula 1] Herein, A is at least one selected from phosphorus (P), Arsenic (As), antimony (Sb), bismuth (Bi), sulfur (S) and selenium (Se), and 0
摘要翻译： 这里，A是选自磷（P），砷（As），锑（Sb），铋（Bi），硫（S）和硒（Se）中的至少一种，0
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公开(公告)号：US09659681B2
公开(公告)日：2017-05-23
申请号：US14528390
申请日：2014-10-30
发明人： Doh Won Jung , Hee Jung Park , Chan Kwak , Byungki Ryu , Kyu Hyoung Lee
摘要： Disclosed is a transparent conductive thin film and an electronic device including the same. The transparent conductive thin film may include a perovskite vanadium oxide represented by Chemical Formula 1, A1-xVO3±δ [Chemical Formula 1] wherein A is a Group II element, 0≦x
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公开(公告)号：US10099938B2
公开(公告)日：2018-10-16
申请号：US14567900
申请日：2014-12-11
发明人： Yoon Chul Son , Byungki Ryu , Sang Mock Lee
摘要： According to example embodiments, a transparent electrically conductive film including a compound that has a two-dimensional electron gas layer, and has a product of an absorption coefficient (α) for light having a wavelength of about 550 nm at 25° C. and a resistivity value (ρ) thereof of less than or equal to about 30 Ω/sq is provided. The electrically conductive film may be a layered crystal structure of the compound.
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