公开(公告)号：US20210034251A1

公开(公告)日：2021-02-04

申请号：US16898935

申请日：2020-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungyong CHOI ,  Doohyun KIM ,  Changkyu SEOL ,  Ilhan PARK

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

Abstract: A method of operating a memory controller, the method including performing a state shaping operation on received data based on state shaping information in response to a write request, the received data and the write request being received from a host, the state shaping information representing a memory cell characteristic corresponding to a memory cell group on which the received data is to be programmed, and the state shaping information being received from a memory device, and transmitting transformation data to the memory device, the transformation data being generated through the state shaping operation.