公开(公告)号：US20190393318A1

公开(公告)日：2019-12-26

申请号：US16203197

申请日：2018-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： WONKEUN CHUNG ,  HEONBOK LEE ,  CHUNGHWAN SHIN ,  YOUNGSUK CHAI ,  SANGJIN HYUN

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.