公开(公告)号：US20230187439A1

公开(公告)日：2023-06-15

申请号：US17957654

申请日：2022-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Gun YOU ,  Sug Hyun SUNG ,  Chan Kyo PARK ,  Seung Chul OH

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06

CPC classification number: H01L27/088 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/0673

Abstract: There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device comprising, a first active pattern on a substrate, the first active pattern including a first lower pattern, which extends in a first direction, and first sheet patterns, which are on the first lower pattern, a second active pattern on the substrate, the second active pattern including a second lower pattern, which is spaced apart from the first lower pattern in a second direction and a second sheet patterns, which are on the second lower pattern, wherein the first lower pattern and the second lower pattern is separated by a fin trench.