公开(公告)号：US09875932B2

公开(公告)日：2018-01-23

申请号：US15277636

申请日：2016-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam-Gun Kim ,  Chan-Mi Lee

IPC: H01L21/768 ,  H01L21/311 ,  H01L27/108 ,  H01L27/11

CPC classification number: H01L21/76877 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/108 ,  H01L27/11 ,  H01L28/00

Abstract: A fabrication method of the semiconductor device comprises forming an isolation layer and an active region, which is defined by the isolation layer, on a substrate, forming an insulating layer on the substrate, forming a plurality of pillar masks, which are spaced from one another by a first gap and a second gap that is smaller than the first gap, on the insulating layer, forming spacers on the plurality of pillar masks, forming mask bridges in regions where the plurality of pillar masks are spaced from one another by the second gap by partially removing the spacers and forming a contact hole, which exposes the active region, by etching the insulating layer using the plurality of pillar masks and the mask bridges.