公开(公告)号：US09502132B2

公开(公告)日：2016-11-22

申请号：US13912649

申请日：2013-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Soo Jang ,  Young-hun Seo ,  Chan-yong Lee

IPC: G11C7/06 ,  G11C17/16 ,  G11C17/18 ,  G11C11/56

CPC classification number: G11C17/16 ,  G11C11/5692 ,  G11C17/18 ,  G11C2211/5624 ,  G11C2211/563

Abstract: An antifuse memory device includes an antifuse memory cell, a reference current generation unit, and a comparison unit. The antifuse memory cell includes an antifuse. The reference current generation unit provides a reference current selected from a plurality of reference currents. The comparison unit compares an intensity of a cell current flowing through the antifuse with an intensity of the reference current and provides an output signal corresponding to a result of the comparison.

Abstract translation: 反熔丝存储器件包括反熔丝存储单元，参考电流产生单元和比较单元。 反熔丝存储单元包括反熔丝。 参考电流产生单元提供从多个参考电流中选择的参考电流。 比较单元将流过反熔丝的单元电流的强度与参考电流的强度进行比较，并提供与比较结果相对应的输出信号。

公开(公告)号：US10339995B2

公开(公告)日：2019-07-02

申请号：US15830314

申请日：2017-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-geun Do ,  Jong-ho Lee ,  Chan-yong Lee ,  Min-soo Jang

IPC: G11C11/406 ,  G11C11/4063 ,  G11C11/4074

Abstract: Provided is a memory device capable of reducing power consumption. The memory device includes a plurality of memory cells; and a self refresh controller configured to perform a refreshing cycle, which includes a first time interval and a second time interval, for a plurality of number of times, the second time interval being longer than the first section, wherein the self refresh controller is configured to perform a burst refreshing operation during the first time interval and to perform a power supply controlling operation during the second time interval.