公开(公告)号：US10318469B2

公开(公告)日：2019-06-11

申请号：US14620219

申请日：2015-02-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Soo Jang ,  Gong-Heum Han ,  Chul-Sung Park ,  Jang-Woo Ryu ,  Chang-Yong Lee ,  Tae-Seong Jang

IPC: G06F13/36 ,  G06F13/42

Abstract: A semiconductor memory device comprises a memory cell array and a data inversion circuit. The data inversion circuit is configured to receive a first unit data and a second unit data stored in the memory cell array through different first data lines, determine, while the first unit data is transmitted to a data input/output (I/O) buffer through a second data line, whether to the invert the second unit data based on a Hamming distance between the first unit data and the second unit data, and transmit the inverted or non-inverted second unit data to the data I/O buffer through the second data line.

公开(公告)号：US09502132B2

公开(公告)日：2016-11-22

申请号：US13912649

申请日：2013-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Soo Jang ,  Young-hun Seo ,  Chan-yong Lee

IPC: G11C7/06 ,  G11C17/16 ,  G11C17/18 ,  G11C11/56

CPC classification number: G11C17/16 ,  G11C11/5692 ,  G11C17/18 ,  G11C2211/5624 ,  G11C2211/563

Abstract: An antifuse memory device includes an antifuse memory cell, a reference current generation unit, and a comparison unit. The antifuse memory cell includes an antifuse. The reference current generation unit provides a reference current selected from a plurality of reference currents. The comparison unit compares an intensity of a cell current flowing through the antifuse with an intensity of the reference current and provides an output signal corresponding to a result of the comparison.

Abstract translation: 反熔丝存储器件包括反熔丝存储单元，参考电流产生单元和比较单元。 反熔丝存储单元包括反熔丝。 参考电流产生单元提供从多个参考电流中选择的参考电流。 比较单元将流过反熔丝的单元电流的强度与参考电流的强度进行比较，并提供与比较结果相对应的输出信号。